상세정보
등록 실리콘 발광 소자
- 출원번호
- 10923230 (2004.08.20)
- 공개번호
- 20050139847 (2005.06.30)
- 등록번호
- 6998643 (2006.02.14)
- 출원국
- 미국
- 협약과제
- 03MB2200, 정보통신용 고기능 반도체 나노 신소자 기술, 이성재
- 초록
- A silicon-based light emitting diode simultaneously adopts doping layers and Distributed Bragg Reflector (DBR). The silicon-based light emitting diode includes an active layer having mutually opposing a first side and a second side. A first reflecting portion faces with the first side of the active layer, and a second reflecting portion faces with the second side of the active layer. A first doping layer is interposed between the active layer and the first reflecting portion. A second doping layer is interposed between the active layer and the second reflecting portion. A first electrode is electrically connectable to the first doping layer, and a second electrode is electrically connectable to the second doping layer. Here, At least one of the first reflecting portion and the second reflecting portion has the DBR that is formed by alternately stacking two kinds of differently composed silicon-containing insulating layers and a gate.
- KSP 제안 키워드
- Active Layer, Bragg reflector, Distributed Bragg reflector, light-emitting, light-emitting diode(LED), silicon-based, silicon-containing