상세정보
등록 멀티비트형 상변화 메모리 소자 구조 및 그 구동 방법
- 출원번호
- 11082054 (2005.03.15)
- 공개번호
- 20060091374 (2006.05.04)
- 등록번호
- 7233017 (2007.06.19)
- 출원국
- 미국
- 협약과제
- 03MB5200, 나노급 상변화 정보저장기술 개발, 유병곤
- 초록
- A multibit phase change memory device structured such that a plurality of individual phase change memory devices are aligned in a plan area or vertically, and a method of driving the same are provided. The multibit phase change memory device includes a phase change material layer having a plurality of contact portions being in contact with a heating electrode, and having a plurality of active regions, each active region forming a unit phase change memory device. The phase change material layer may be composed of one material layer in which the plurality of active regions are aligned in plural arrays. Alternatively, the phase change material layer may be composed of a plurality of phase change material layers in which one or plural active regions are respectively aligned in one array. The plurality of phase change material layers may be disposed in a same level of a plan area, or the plurality of phase change material layers may be respectively disposed on different plan areas in a same vertical line.
- KSP 제안 키워드
- Phase Change Material(PCM), Phase change, active region, memory device