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Registered MULTIBIT PHASE CHANGE MEMORY DEVICE AND METHOD OF DRIVING THE SAME

멀티비트형 상변화 메모리 소자 구조 및 그 구동 방법
이미지 확대
Inventors
Yoon Sung Min, Byoung Gon Yu, Shin Woong Chul, Ryu Sangouk, Nam-Yeal Lee
Application No.
11082054 (2005.03.15)
Publication No.
20060091374 (2006.05.04)
Registration No.
7233017 (2007.06.19)
Country
UNITED STATES
Project Code
03MB5200, Technology of a nano scale phase change data storage, Byoung Gon Yu
Abstract
A multibit phase change memory device structured such that a plurality of individual phase change memory devices are aligned in a plan area or vertically, and a method of driving the same are provided. The multibit phase change memory device includes a phase change material layer having a plurality of contact portions being in contact with a heating electrode, and having a plurality of active regions, each active region forming a unit phase change memory device. The phase change material layer may be composed of one material layer in which the plurality of active regions are aligned in plural arrays. Alternatively, the phase change material layer may be composed of a plurality of phase change material layers in which one or plural active regions are respectively aligned in one array. The plurality of phase change material layers may be disposed in a same level of a plan area, or the plurality of phase change material layers may be respectively disposed on different plan areas in a same vertical line.
KSP Keywords
Phase Change Material(PCM), Phase change, active region, memory device