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Registered SCHOTTKY DIODE AND METHOD OF FABRICATING THE SAME

쇼트키 다이오드 및 그의 제조방법
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Inventors
Suh Dongwoo, 전린, 루웨이, Kim Young Jun
Application No.
14339915 (2014.07.24)
Publication No.
20150155395 (2015.06.04)
Registration No.
9508873 (2016.11.29)
Country
UNITED STATES
Project Code
13ME1200, A new technology for silicon MIR photodetector, Suh Dongwoo
Abstract
Provided is a Schottky diode. The Schottky diode includes: a substrate; a core on the substrate; a metallic layer on the core; and a shell surrounding the core between the metallic layer and the substrate and adjusting a Fermi energy level of the core to form a Schottky junction between the core and the metallic layer.
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Status Patent Country KIPRIS
Registered schottky diode and manufacturing method of the same KOREA KIPRIS