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Detail
Registered SCHOTTKY DIODE AND METHOD OF FABRICATING THE SAME
- Inventors
- Suh Dongwoo, 루웨이, 전린, Kim Young Jun
- Application No.
- 14339915 (2014.07.24)
- Publication No.
- 20150155395 (2015.06.04)
- Registration No.
- 9508873 (2016.11.29)
- Country
- UNITED STATES
- Project Code
- 13ME1200, A new technology for silicon MIR photodetector, Suh Dongwoo
- Abstract
- Provided is a Schottky diode. The Schottky diode includes: a substrate; a core on the substrate; a metallic layer on the core; and a shell surrounding the core between the metallic layer and the substrate and adjusting a Fermi energy level of the core to form a Schottky junction between the core and the metallic layer.
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | schottky diode and manufacturing method of the same | KOREA | KIPRIS |