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Registered STEP-FORMED STRUCTURE SOURCE FIELD PLATE NITRIDE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME

단차 구조 소스 필드 플레이트 질화물 전계 효과 트랜지스터 및 그 제조방법
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Inventors
Hyung Seok Lee, Kim Ki Hwan, Sang Choon Ko, Jung Dong Yun, Kim Zin-Sig, Junbo Park, Park Young Rak, Jun Chi Hoon, Eun Soo Nam, Jeho Na
Application No.
15265647 (2016.09.14)
Publication No.
20170077282 (2017.03.16)
Registration No.
9755027 (2017.09.05)
Country
UNITED STATES
Project Code
15MB1800, Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations, Jong-Won Lim
Abstract
Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.
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Status Patent Country KIPRIS
Registered ELECTRONICAL DEVICE KOREA KIPRIS