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Registered STEP-FORMED STRUCTURE SOURCE FIELD PLATE NITRIDE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
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STEP-FORMED STRUCTURE SOURCE FIELD PLATE NITRIDE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Inventors
- Hyung Seok Lee, Kim Ki Hwan, Sang Choon Ko, Kim Zin-Sig, Junbo Park, Jeho Na, Park Young Rak, Eun Soo Nam, Jun Chi Hoon, Jung Dong Yun
- Application No.
- 15265647 (2016.09.14)
- Publication No.
- 20170077282 (2017.03.16)
- Registration No.
- 9755027 (2017.09.05)
- Country
- UNITED STATES
- Project Code
- 15MB1800, Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations, Jong-Won Lim
- Abstract
- Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.
- KSP Keywords
- Drain electrode, Field Effect Transistor(FET), Field plate, Source Field Plate, Source field, electronic devices, field effect, gate electrode
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | 전자 소자 | KOREA | KIPRIS |