Registered
POWER SEMICONDUCTOR MODULE AND METHOD FOR STABILIZING THEREOF
- Inventors
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Minki Kim, Jung Dong Yun, Hyun-Gyu Jang, Sang Choon Ko, Jun Chi Hoon, Lee Hyun Soo
- Application No.
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15223826 (2016.07.29)
- Publication No.
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20170117889 (2017.04.27)
- Registration No.
- 9748941 (2017.08.29)
- Country
- UNITED STATES
- Project Code
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15MB8200, Next Generation High Efficiency 3-Dimensional Convergence Power Conversion Module,
Sang Choon Ko
- Abstract
- Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.
- KSP Keywords
- E-mode, Field-effect transistors(FETs), Mode field, Power semiconductor, Same structure, Stabilizing circuit, depletion-mode, enhancement-mode, field effect
- Family
-