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Registered POWER SEMICONDUCTOR MODULE AND METHOD FOR STABILIZING THEREOF

Inventors
Minki Kim, Jung Dong Yun, Hyun-Gyu Jang, Sang Choon Ko, Jun Chi Hoon, Lee Hyun Soo
Application No.
15223826 (2016.07.29)
Publication No.
20170117889 (2017.04.27)
Registration No.
9748941 (2017.08.29)
Country
UNITED STATES
Project Code
15MB8200, Next Generation High Efficiency 3-Dimensional Convergence Power Conversion Module, Sang Choon Ko
Abstract
Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.
KSP Keywords
E-mode, Field-effect transistors(FETs), Mode field, Power semiconductor, Same structure, Stabilizing circuit, depletion-mode, enhancement-mode, field effect
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Status Patent Country KIPRIS
Registered POWER SEMICONDUCTOR MODULE AND METHOD FOR STABLING THEREOF KOREA KIPRIS