Registered
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Inventors
-
Hokyun Ahn, Kwon Yong-Hwan, Hyung Sup Yoon, Eun Soo Nam, Jong-Won Lim, Kim Seong-Il, Lee Sang-Heung, Kyu Jun Cho, Kim Dong-Young, Min Byoung-Gue, Jongmin Lee, Dong Min Kang, Jae Won Do, Jung Hyunwook, Hae Cheon Kim
- Application No.
- 15/248676 (2016.08.26)
- Registration No.
- 10134854 (2018.11.20)
- Country
- UNITED STATES
- Project Code
-
15MB1800, Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations,
Jong-Won Lim
- KSP Keywords
- Fabrication method, High electron, High electron mobility, High-electron mobility transistor(HEMT), electron mobility
- Family
-