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Registered SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Inventors
- Hyung Seok Lee, Jang Yoo Jin, Hokyun Ahn, Jong-Won Lim, Kim Seong-Il, Bae Sung-Bum, Kim Dong-Young, Min Byoung-Gue, Jongmin Lee, Mun Jae Kyoung, Woojin Chang, Lee Sang-Heung, Kim Jeong Jin, Jae Won Do, Shin Min Jeong, Sungjae Chang, Kyu Jun Cho, Kim Zin-Sig, Hae Cheon Kim, Hyung Sup Yoon, Jung Hyunwook, Ji Hong Gu, Dong Min Kang
- Application No.
- 16839964 (2020.04.03)
- Publication No.
- 20200235028 (2020.07.23)
- Registration No.
- 10784179 (2020.09.22)
- Country
- UNITED STATES
- Project Code
- 17HB2400, Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations, Jong-Won Lim
- Abstract
- A method for fabricating a semiconductor device includes sequentially laminating a separation layer and a first substrate layer on a sacrificial substrate, and forming a heat dissipation plate comprising a first region and a second region on the first substrate layer. The method further includes removing the sacrificial substrate and the separation layer, and patterning the first substrate layer to form a first substrate exposing the heat dissipation plate in the second region and contacting the heat dissipation plate in the first region, and forming a first element on the first substrate. The method still further includes forming a plurality of conductive pads disposed on the heat dissipation plate in the second region and a first line connecting at least one of the plurality of conductive pads to the first element, and forming a second element on the conductive pads in the second region.
- Family
| Status | Patent | Country | KIPRIS |
|---|---|---|---|
| Registered | Semiconductor device and method of fabricating the same | KOREA | KIPRIS |
| Registered | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | UNITED STATES |