20HB2900, Development of Millimeter Wave 5G Components Using Compound Semiconductor Process,
Dong Min Kang
Abstract
전력 반도체 소자가 제공된다. 본 발명의 실시예들에 따른 전력 반도체 소자는 기판; 상기 기판의 하면 상의 베리어층; 상기 베리어층의 하면 상의 오믹 전극들; 상기 기판과 상기 베리어층 사이의 버퍼층; 및 상기 기판의 상면 및 상기 기판의 상면으로부터 리세스된 트렌치의 내부 표면을 덮는 도전막을 포함하되, 상기 도전막의 하면은 상기 버퍼층의 상면 및 상기 버퍼층의 하면의 사이에 위치하고, 상기 버퍼층은 상기 도전막의 상기 하면과 인접하게 형성된 불순물 영역을 가질 수 있다.
KSP Keywords
Power semiconductor, power semiconductor devices, semiconductor device
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