20FU1200, Development of EHF 3D TIV integration process and InP/GaN device technology,
Hokyun Ahn
Abstract
화합물 반도체 소자가 제공된다. 본 발명의 실시예들에 따른 화합물 반도체 소자는 기판의 상에 제1 방향으로 연장된 핀을 갖는 제1 반도체 층; 상기 제1 반도체 층 상에 상기 제1 방향과 수직한 제2 방향으로 연장된 상부 게이트 전극; 상기 핀의 측벽과 상기 상부 게이트 전극 사이의 제2 반도체 층; 상기 핀의 상면 및 상기 상부 게이트 전극 사이의 유전층; 및 상기 기판을 관통하여 상기 제1 반도체 층의 하면과 연결되는 하부 게이트 구조체를 포함할 수 있다.
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J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
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