Registered
hBN(Hexagonal Boron Nitride)을 이용한 고방열성 반도체 소자 및 그 제조방법
- Inventors
-
최일규, 김해천, 임종원, 안호균, 이상흥, 장성재, 노윤섭, 정현욱, 김성일
- Application No.
- 2021-0144781 (2021.10.27)
- Publication No.
- 10-2022-0126198 (2022.09.15)
- Registration No.
- 2712120 (2024.09.25)
- Country
- KOREA
- Project Code
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20VU1100, Development of self-reliance platform in defense advanced semiconductor materials and components for weapon system,
Jong-Won Lim
- KSP Keywords
- Boron nitride, Manufacturing method, hexagonal boron nitride(hBN), semiconductor device
- Family
-