Registered
질화물 반도체 소자의 제조방법
- Inventors
-
이형석, 배성범, 김진식
- Application No.
- 2021-0084058 (2021.06.28)
- Publication No.
- 10-2022-0138312 (2022.10.12)
- Registration No.
- 2613007 (2023.12.05)
- Country
- KOREA
- Project Code
-
20HB4600, Development of 1kV vertical GaN Epitaxial wafer using low defect GaN single crystal substrates,
Hyung Seok Lee
- KSP Keywords
- Nitride semiconductor