산화물 반도체를 포함하는 SRAM 소자

성과물

특허 검색
구분		출원국
출원년도	~	키워드

등록 산화물 반도체를 포함하는 SRAM 소자

초록: Provided is a static random-access memory (SRAM) device. The SRAM device includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes a first NMOS area and a second NMOS area vertically separated from the PMOS area with the first NMOS area therebetween, a first transistor including a first gate electrode disposed on the PMOS area, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, a second transistor including a second gate electrode disposed in the first NMOS area and a second channel vertically overlapping the second gate electrode, and a third transistor including a third gate electrode disposed in the second NMOS area and a third channel vertically overlapping the third gate electrode, wherein the first channel includes silicon, wherein the second channel and the third channel include an oxide semiconductor.

KSP 제안 키워드: Oxide semiconductor, Random Access, Source and drain, Static random-access memory(SRAM), gate electrode, insulating layer

(34129) 대전광역시 유성구 가정로 218, ETRI 대표 문의처: TEL 1466-38(6자리) / KSP 오류, 불편접수: TEL 042-860-6981

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