ETRI-Knowledge Sharing Plaform

High Performance Metal Oxide Thin-Film Transistors Oxide Tfts Low Temperature(LT) Subthreshold Swing(SS) Solution-Processed High Mobility Channel Length Semiconductor Device Gate Dielectric Threshold Voltage(Vth) High Density Plasma High Field-Effect Mobility Active Layer Indium-Free Need For Transistor Characteristics Flexible Display Large-Area Electronics P-Type Characteristics Subthreshold Slope(SS) Turn-On Voltage Deep Submicron Self-Aligned Bottom Gate Channel Layer Display Panel Gate Pulse Double Layer Hole Mobility Electrical Characteristics Gate Insulator Highly Stable Positive Bias Transparent Electronics Pulsed Laser Ablation(PLA) Annealing Conditions Chemical Vapor Deposited Current Efficiency Contact Configuration Channel Structure Charge Transfer Defect States Display Device Density Functional Theory Calculations Etching Method Etch-Stop Environmental Parameters Electrical Properties(I-V curve) Highly Reliable Heterojunction Structure Injection Control Low-Power Microelectronic Devices Nano-Gap Ohmic Contact Resistance Power Consumption Parasitic Capacitance Quantum Dot(QD) Sn-Rich I-V Characteristic(Transport property) Top-Gate Transparent Oxide Semiconductor Ternary Compounds 460 Nm Ac Bias Atomic Layer Deposition Bottom Contact Computationally Efficient Double-Channel Driver Circuit Earth-Abundant Materials Electron Injection Electronic Transport Properties Electrical Performance High-Speed Operation Highly Conductive Inverted Staggered In-Zn-O Liquid Crystal Device Metal Source/Drain(S/D) Next-Generation Oscillating Frequency P-Type Tin Oxide Precursor Solution Ring Oscillator Resolution Limit Ultra-High Resolution Spatial Light Modulator(SLM) Transparent Thin Film Transistor(TTFT) Tft Array Transfer Process Triple-Layer Ac Drive Contrast Ratio Charging And Discharging Contact Structure Drain Current Electron Mobility Elastomeric Substrate Facile Route Fabrication Process High Responsivity In-Memory Low Mobility On/Off Ratio Oxide Material Room-Temperature Polyimide Substrate Switching Characteristics Voltage Stress Vertical Channel 5 Nm Short Time Thin-Film Phototransistors(TFPT) Active Structure Al-Doped A-Igzo Tfts Carrier Concentration Dual-Mode Defect Sites Electronic Structures Guest-Host Hydrogen Diffusion Hall Mobility Novel Material Organic Light-Emitting Diodes(OLEDS) Oxide Deposition Oxygen Vacancies On/Off Current Ratio Pulse Voltage Pulse Shape P-Channel Reliability Test Reliable Design Stable Operation Sputtering Method Top Contact Memory Applications Complementary Metal-Oxide-Semiconductor(CMOS) Driving Method Device Performance Defect Passivation Fabrication And Characterization Gate Bias High Temperature Interface Trap Igzo Semiconductor Key Factor Indium Zinc Oxide Light Shutter Off-State Current Plasma-Enhanced Chemical Vapor P-Type Oxide Semiconductor Power Integrated Circuits Short-Pulsed Semiconductor Heterojunction Cmos Inverter In-Zn-Sn-O Aluminum Oxide A-Ingazno Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Cost-Effective Fabrication Display Applications External Bias Hydrogen Impurity Image Sensor N-Type And P-Type Performance Parameter Photo-Stability Photo-Responsive P-Type And N-Type Pulsed Current Solution-Processable First Stokes(S1) Tri-Layer Tin (Iv) Oxide Fingerprint Sensor Oxide Electronics Applied Electric Field Bias Stress Binary Oxide Back-Channel Etching Active Devices Channel Width Consumer Electronics Holographic Display Hydrogen Atoms High Photoresponsivity Laser Lift-Off Layered Oxide Low Annealing Temperature Photo-Generated Holes Specific Detectivity Stop Layer Stress Conditions Transparent Semiconductor Tin Oxide Films Analysis Method Bias Stability Channel Current Diffusion Barrier(DB) Film Formation Flexible Substrate High-Throughput Screening High Concentration High Uniformity K-Doped Indium Zinc Tin Oxide(IZTO) Low-Cost Minimum Power Manufacturing Processes Persistent Photoconductivity (Ppc) Standard Deviation(STD) Semiconductor Thin Film Thermal Annealing Transient Currents Gate Driver