ETRI-Knowledge Sharing Plaform

High Performance Metal Oxide Thin-Film Transistors Oxide Tfts Low Temperature(LT) Subthreshold Swing(SS) Solution-Processed High Mobility Channel Length Semiconductor Device Gate Dielectric Threshold Voltage(Vth) High Density Plasma High Field-Effect Mobility Active Layer Indium-Free Need For Transistor Characteristics Flexible Display Large-Area Electronics P-Type Characteristics Subthreshold Slope(SS) Turn-On Voltage Deep Submicron Self-Aligned Display Panel Bottom Gate Channel Layer Gate Pulse Double Layer Hole Mobility Electrical Characteristics Gate Insulator Highly Stable Positive Bias Transparent Electronics Pulsed Laser Ablation(PLA) Ohmic Contact Resistance Annealing Conditions Chemical Vapor Deposited Current Efficiency Contact Configuration Channel Structure Charge Transfer Defect States Display Device Density Functional Theory Calculations Environmental Parameters Etching Method Etch-Stop Electrical Properties(I-V curve) Heterojunction Structure Injection Control Highly Reliable Low-Power Microelectronic Devices Nano-Gap Power Consumption Parasitic Capacitance Quantum Dot(QD) Sn-Rich I-V Characteristic(Transport property) Top-Gate Transparent Oxide Semiconductor Ternary Compounds Ac Bias Atomic Layer Deposition Bottom Contact Computationally Efficient Driver Circuit Double-Channel Earth-Abundant Materials Electronic Transport Properties Electron Injection Electrical Performance Highly Conductive High-Speed Operation Inverted Staggered In-Zn-O Liquid Crystal Device Metal Source/Drain(S/D) Next-Generation Oscillating Frequency Precursor Solution P-Type Tin Oxide Ring Oscillator Ultra-High Resolution Resolution Limit Spatial Light Modulator(SLM) Triple-Layer Transparent Thin Film Transistor(TTFT) Tft Array Transfer Process 460 Nm 5 Nm Charging And Discharging Facile Route Room-Temperature Ac Drive Contrast Ratio Contact Structure Drain Current Electron Mobility Fabrication Process Elastomeric Substrate High Responsivity In-Memory Low Mobility On/Off Ratio Oxide Material Polyimide Substrate Switching Characteristics Short Time Vertical Channel Voltage Stress Oxygen Vacancies Memory Applications Active Structure A-Igzo Tfts Al-Doped Carrier Concentration Dual-Mode Defect Sites Electronic Structures Hydrogen Diffusion Guest-Host Hall Mobility Novel Material Organic Light-Emitting Diodes(OLEDS) Oxide Deposition On/Off Current Ratio Pulse Voltage Pulse Shape P-Channel Reliability Test Reliable Design Stable Operation Sputtering Method Thin-Film Phototransistors(TFPT) Top Contact Power Integrated Circuits Cmos Inverter Complementary Metal-Oxide-Semiconductor(CMOS) Driving Method Defect Passivation Device Performance Fabrication And Characterization Gate Bias High Temperature Interface Trap Igzo Semiconductor In-Zn-Sn-O Indium Zinc Oxide Key Factor Light Shutter Off-State Current Plasma-Enhanced Chemical Vapor P-Type Oxide Semiconductor Semiconductor Heterojunction Short-Pulsed Aluminum Oxide A-Ingazno Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Cost-Effective Fabrication Display Applications External Bias Fingerprint Sensor Hydrogen Impurity Image Sensor N-Type And P-Type Oxide Electronics Performance Parameter Photo-Stability Photo-Responsive P-Type And N-Type Pulsed Current Solution-Processable First Stokes(S1) Tri-Layer Tin (Iv) Oxide Applied Electric Field Bias Stress Binary Oxide Back-Channel Etching Active Devices Channel Width Consumer Electronics Holographic Display Hydrogen Atoms High Photoresponsivity Low Annealing Temperature Laser Lift-Off Layered Oxide Photo-Generated Holes Specific Detectivity Stress Conditions Stop Layer Transparent Semiconductor Tin Oxide Films Analysis Method Bias Stability Channel Current Diffusion Barrier(DB) Film Formation Flexible Substrate Gate Driver High Uniformity High-Throughput Screening High Concentration Indium Zinc Tin Oxide(IZTO) K-Doped Minimum Power Low-Cost Manufacturing Processes Persistent Photoconductivity (Ppc) Standard Deviation(STD) Semiconductor Thin Film Transient Currents Thermal Annealing