ETRI-Knowledge Sharing Plaform

Spatial Light Modulator(SLM) Oxide Tfts High Performance Digital Holography Channel Length Phase Change Material(PCM) Large Area Subthreshold Slope(SS) Next-Generation Holographic Display Data Line Gate Dielectric Spatial Light Modulation Glass Substrate Display Panel High Field-Effect Mobility Short Channel Digital Hologram Electrical Characteristics Gate Insulator Highly Stable Dry Etching Thin Structure Low Temperature(LT) Ultra-High Resolution On/Off Ratio Pixel Structure Turn-On Voltage Vertical Channel Ultrathin Layer Gate Line Metal Oxide Thin-Film Transistors Sub-Micron 3d Image Optical Components Plasmonic Structures Visible Range Active Layer Double Layer Display Applications High Mobility Channel Width High-Resolution Displays Liquid Crystal Memristor Device Neuromorphic Hardware Resonant Cavity Solution-Processed Indium-Free Annealing Conditions Back-Channel Etch Cathode Ray Tube Electrically Controlled Birefringence Focused Analysis Holography System High-Speed Interface Lossy Dielectric Layer Large Size Modulation Characteristic Ohmic Contact Resistance Naked Eye Phase-Only Sn-Rich Steep Slope Absorption Features Absorption Profile Atomic Layer Deposition Double-Channel Earth-Abundant Materials Electronic Holography Full-Color High-Speed Operation High Definition High-Quality Highly Conductive Inverted Staggered In-Zn-O Light Waves Metal Source/Drain(S/D) Need For Narrow Channel Oscillating Frequency Ring Oscillator Reflection-Type STRETCHABLE ELECTRONICS Treatment Process Transistor Characteristics Active Matrix Display Active Area Critical Coupling Charging And Discharging Electronic Devices Erasing And Rewriting Etch Damage Etching Process Facile Route Flexible Display Fabrication Process Highly Efficient Low Mobility Oxide Material Numerical Simulations Pixel Integration Perfect Absorption Subthreshold Swing(SS) Stretchable Electrode Surface Plasmon(SP) Three Dimensional(3D) Threshold Voltage(Vth) 3d Object Active Structure A-Igzo Tfts Broadband Applications Carrier Concentration Cross Talk Defect Sites Key Components Rapid Development Stable Output Wet Treatment Wearable Electronics Amplitude-Only Color-Selective Chemical Bonding State Display System Defect Passivation Diagonal Length Device Performance Device Characteristics Frequency Range High Temperature Interface Trap Igzo Semiconductor Image Data Multi-Band Oxide Semiconductor Off-State Current Shift Register Short-Pulsed Treatment Method Thin Film Thermoelectric Very High Resolution In-Zn-Sn-O Absorption Properties Aluminum Oxide A-Ingazno Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Binary Pattern Computer Generated Holograms(CGH) Comparative Study External Bias Etching Damage Laser Writing Photo-Stability Pulsed Current Solution-Processable First Stokes(S1) Subwavelength Metallic Gratings Spectral Absorption Technical Issues Numerical Study Thermoelectric Materials Electric Power Generation Hydrogen Atoms High Refractive Index Image Hologram Lcd Panel Low Annealing Temperature Off Current Phase Modulation Proof Of Concept Positive Bias Structural Parameters Switching Device Transparent Electronics Two-Dimensional Image Visible Region Wide Viewing Angle Coupling Conditions Small Size Absorption Characteristic Bias Stability Fine Pitch High Concentration High Uniformity High-Capacity Optical Modulation Simulation Results Subwavelength Resolution Still Image Thermal Annealing Ultraviolet Laser 3 V 20th Century