Registered
고 전자이동도 트랜지스터 및 그의 제조방법
- Inventors
-
정현욱, 최일규, 남상우, 김도현, 안호균, 김성일, 이상흥, 장성재, 노윤섭, 김해천, 임종원
- Application No.
- 2024-0062442 (2024.05.13)
- Publication No.
- 10-2852354 (2025.08.26)
- Registration No.
- 2852354 (2025.08.26)
- Country
- KOREA
- Project Code
-
22FU1100, Development of EHF 3D TIV integration process and InP/GaN device technology,
Hokyun Ahn
- KSP Keywords
- High electron, High electron mobility, High-electron mobility transistor(HEMT), Manufacturing method, electron mobility