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Registered ALPHA GALLIUM OXIDE THIN FILM STRUCTURE WITH HIGH CONDUCTIVITY BY SELECTIVE AREA GROWTH USING HALIDE VAPOR PHASE EPITAXY GROWTH AND MANUFACTURING METHOD THEREOF

Inventors
Mun Jae Kyoung, 박지현, 전대우
Application No.
18/224396 (2023.07.20)
Registration No.
12480222 (2025.11.25)
Country
UNITED STATES
Project Code
22JB1800, Several kV high efficiency ultra small power semiconductor core material technology, Mun Jae Kyoung
22PB2700, Development of high-quality Ga2O3 epitaxial material with low defect density (1x104cm-2) and power device technology with breakdown voltage (1KV), Mun Jae Kyoung
KSP Keywords
Area growth, Epitaxy growth, Film structure, Gallium Oxide, High Conductivity, Manufacturing method, Oxide thin films, Selective area, Selective area growth, Vapor phase epitaxy, halide vapor phase epitaxy, thin film(TF), thin film structure, vapor phase
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Status Patent Country KIPRIS
Registered HVPE 성장법을 이용한 선택적 영역 성장에 의해 고전도성을 갖는 알파 산화갈륨 박막 구조물 및 그 제조 방법 KOREA
Registered HVPE 성장법을 이용한 선택적 영역 성장에 의해 고전도성을 갖는 알파 산화갈륨 박막 구조물 및 그 제조 방법 KOREA
Registered ALPHA GALLIUM OXIDE THIN FILM STRUCTURE WITH HIGH CONDUCTIVITY BY SELECTIVE AREA GROWTH USING HALIDE VAPOR PHASE EPITAXY GROWTH AND MANUFACTURING METHOD THEREOF UNITED STATES
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