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Registered 초기 성장모드 제어를 통한 고품질 베타 산화갈륨 호모에피 성장 방법과 이에 의해 제조된 고품질 베타 산화갈륨 구조물 및 그 전력반도체 소자

Inventors
문재경, 박지현, 전대우
Application No.
2024-0125331 (2024.09.13)
Registration No.
2826559 (2025.06.24)
Country
KOREA
Project Code
24JS1800, Several kV high efficiency ultra small power semiconductor core material technology, Mun Jae Kyoung
KSP Keywords
Gallium Oxide, Growth method, Growth mode, High-quality, Homoepitaxial growth, Oxide structure, Power semiconductor, mode control, power semiconductor devices, semiconductor device