ETRI-Knowledge Sharing Plaform

Oxide Thin-Film Transistors Threshold Voltage(Vth) Silicon-Based Plasma Treatment Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Dynamic Random-Access Memory(DRAM) Oxide Tfts Negative Bias Hydrogen Diffusion Bias Temperature Stress Charge Storage Hydrogen-Induced Memory Device Nitrogen Dioxide Conventional Design 3 V Memory Applications Back-End-Of-Line Bias Stress Passivation Layer Defect Passivation Dram Cell Transistor Chemical Damage Breakdown Voltage Thermal Stability O 1s Subthreshold Swing(SS) Cell Area Morphological Degradation 48 V Cl Incorporation Current Stress Oxide Semiconductor Oxide Channel Ferroelectric Field-Effect Transistor Transient Currents High Current Need For 1 H Off-State Current Deep Level Titanium Nitride Electrical Performance Non-Monotonic Next-Generation Positive Bias Hydrogen-Rich Monolithic 3d Performance Enhancement Sampling Time(Ts) Surface Analysis Defect States Failure Mechanisms Potential Failures Bonding Structure Nitrogen Doping Xps Depth Profiling Comparative Analysis Hydrogen Incorporation Novel Technique Thermal Stress Channel Layer Trap States