ETRI-Knowledge Sharing Plaform

Oxide Thin-Film Transistors Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Dynamic Random-Access Memory(DRAM) Oxide Tfts Negative Bias Plasma Treatment Threshold Voltage(Vth) Subthreshold Swing(SS) Silicon-Based Hydrogen Diffusion Bias Temperature Stress Charge Storage Hydrogen-Induced Memory Device Nitrogen Dioxide Conventional Design 3 V Precise Control Memory Applications Back-End-Of-Line Bias Stress Passivation Layer Defect Passivation Dram Cell Transistor Chemical Damage Breakdown Voltage Thermal Stability O 1s Cell Area Operational Stability Morphological Degradation Chemical Analyses 48 V Cl Incorporation Current Stress Conduction Path Oxide Semiconductor Oxide Channel Low Power Partial Crystallization Ferroelectric Field-Effect Transistor Processing Conditions Transient Currents High Current Need For 1 H Control Range Indium Diffusion Off-State Current Deep Level Titanium Nitride Stable Intermediate Electrical Performance Next-Generation Non-Monotonic Hydrogen-Rich Positive Bias Monolithic 3d Performance Enhancement Sampling Time(Ts) Ir Drop Oxide Electronics Surface Analysis Defect States Compensation Circuitry Failure Mechanisms Potential Failures Bonding Structure Nitrogen Doping Xps Depth Profiling Power Electronic Systems Comparative Analysis Hydrogen Incorporation Novel Technique Thermal Stress Oxygen Vacancy Formation Channel Layer Trap States