구분 | 연도 | 논문 | 피인용 | 원문 |
---|---|---|---|---|
학술지
|
2019 | Improvement of Proton Radiation Hardness Using ALD-Deposited Al2O3 Gate Insulator in GaN-Based MIS-HEMTs 장성재 ECS Journal of Solid State Science and Technology, v.8 no.12, pp.245-248 | 10 | 원문 |
학술대회
|
2019 | Improvement of Proton Radiation Hardness through Bi-layer Gate Insulating System in GaN-based MIS-HEMTs 장성재 Internatinoal Conference on Nitride Semiconductors (ICNS) 2019, pp.119-119 |