ETRI-Knowledge Sharing Plaform

Gan-Based Device Performance Algan/Gan Hemts Gate Recess Carrier Mobility Radiation Hardness W-Band Metamorphic High Electron Mobility Transistor(mHEMT) Channel Thickness Sapphire Substrates Gate Dielectric T-Shaped Gate And Gate Cut-Off Frequency Metal-Insulator-Semiconductor(MIS) Device Properties Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Mechanical Stress Gate Insulator Dielectric Layer Surface Treatments Proton Radiation Ohmic Contact Enhancement-Mode Gate Bias Stress Two-Step 5 Nm Bi-Layer Head Size Performance Degradation T-Gate 60 Ghz Maximum Oscillation Frequency Sheet Resistance Proton Irradiation Total Ionizing Dose Effects Stress Measurement Hexagonal Boron Nitride(h-BN) Two-Dimensional Electron Gas(2DEG) Components Technology Electrical Properties(I-V curve) Mobility Behavior Transmission Electron Microscopy(TEM) Algan/Gan Mis-Hemt Channel Mobility Electrical Characterization High Performance Next-Generation Plasma Treatment Recessed Gate Rf Characteristics Release Layer Transfer Characteristics Threshold Voltage Shift Citric Acid Metal Deposition Off-State Passivation Layer Subthreshold Slope(SS) Trapped Charge Tetramethylammonium Hydroxide Compressive Stress Electron Trapping Multi-Purpose Channel Layer Low Noise Amplifier(LNA) Radiation Tolerance Output Characteristics Recess Gate Transfer Technique Wet Etching Atomic Force Microscope(AFM) Charge Trapping Compound Semiconductor Gate Capacitance Tensile Stress Algan/Gan Heterostructure Access Region Hetero-Interface Insulating Layer Sic Device X-Band Applications Dc Output Atomically Thin Critical Defects Contact Resistance(73.40.Cg) Coulomb Scattering Contact Interface Degradation Mechanism Device Degradation Electrochemical Reaction(ECR) Electrode Process Hole Trapping Gate Electrode Hysteresis Phenomenon Linear Energy Transfer Mobility Extraction Method Metal Oxide Semiconductor Measurement Results Microelectronic Devices Nanometer-Scale Practical Implementation Radiation-Induced Satellite Communication System Target Current I-V Characteristic(Transport property) Transport Characteristics Vt Shift Gan Films 2d Material O 3 Accurate Model Atomic Layer Deposition Chemical Deposition Channel Quality Carrier Transport Capping Layer Coupling Effects Conversion Loss Dc Measurements Dislocation Density Depletion Mode Epitaxial Wafer Gate Operation Gate Coupling Gan On Sic Gaas Mmic Initialization Vector(IV) Organic Vapor Noise Figure(NF) Plasma-Enhanced Chemical Vapor Deposition(PECVD) Property Improvement Resistive Mixer Radio Frequency (Rf) Performance Radiation Resistance Single-Ended Saturation Current Transistor Characteristics Time Exponent X-Ray Photoelectron Spectroscopy (Xps) Etch Profile Atomic Force Microscopy (Afm) Cleaning Process Double-Gate(DG) Dc Characteristics Device Layout Etching Rate Energy Barrier Edge-Type Gas Reduction Gate Foot Gate Leakage Current Process Technique Quality Improvement Rf Application Rf Properties Scanning Electron Microscopy(S.E.M.) State-Of-The-Art Subthreshold Swing(SS) Etching Process Fabrication Process Measurement Data Radio Frequency Applications 110 Ghz Active Region Current-Voltage Measurements Carrier Transfer Carrier Concentration Contact Area Dot Pattern Direct Contact Device Fabrication Etching Solution Electronics And Optoelectronics Energy Levels Equivalent Circuit Model(ECM) Etching Conditions Fin Width Gate Control Hydrogen Silsesquioxane Interface Quality Image Rejection Mixer Input Signal I-V Measurement Mobility Degradation Non-Uniformity On/Off Current Ratio Ohmic Metal Pulsed Mode Quaternary Alloy Surface Treatment Method Single-Layer Saturation Drain Current Theoretical Calculation Trap Sites Three-Layered Via-Hole Van Der Waals Heterostructure Wafer-Scale Gan Power Amplifier As 2 Charging Time Device Characteristics Etch Rates Fluorine Ions Frequency Range Gate Voltage Gan Capping Key Device Interface Trap Large-Scale Mim Capacitor Native Oxide Layer Normally-Off Radiation Effects Sin Passivation Systematic Study Van Der Waals Interaction Width Effects X-Ray Diffraction (Xrd) F Max 94 Ghz Ac Stress Applied Bias Comparative Study Current Density Degradation Factor Different Modes Direct Current(DC) Dc Current Digital Etch Energy Dispersive X-Ray Spectroscopy(EDX) Epitaxial Layer Electron Beam Lithography Gate Length Iii-Nitrides Operating Parameters Power Amplifiers(PAs) Plasma Damage Process Technology Spurious Suppression Spectroscopic Analyses Surface Defects Single-Gate(SG) Wideband Operation Conversion Gain Capacitance-Voltage Atomic Force Microcopy Cu Film Channel Properties Common-Source Deterioration Mechanism Displacement Damage Electrical Characteristics Frequency Multiplier Gate Resistance High Output High Power Devices Inalas/Ingaas Mhemt Laser Lift-Off Low Annealing Temperature Nitride Layer Ohmic Electrode Off-Chip Power Losses Power Amplifier Mmic Recess Depth Silicon Nitride Sic Substrate Stress Effects Stress Conditions Stress Engineering Si-Based Temperature Dependence Thin Film Resistor Thermal Conductivity Via Etch Actual Operation Aln Substrate Crystalline Quality Charging Effects CF 4 Channel Current Drain Voltage Defect-Free Electrochemical Potential Electron Beam Exposure Frequency Properties Improved Performance Lithography Process Measuring Channel Metalorganic Chemical Vapor Deposition Manufacturing Processes Ohmic Behavior Performance And Reliability Performance Deterioration Recess Etch Substrate Effects Self-Heating Effect(SHE) Various Substrates Xrd Data 3 V Dangling Bonds 28 Ghz