ETRI-Knowledge Sharing Plaform

Gan-Based Device Performance Algan/Gan Hemts Carrier Mobility Gate Recess Radiation Hardness W-Band Metamorphic High Electron Mobility Transistor(mHEMT) Channel Thickness Surface Treatments Gate Dielectric T-Shaped Gate Metal-Insulator-Semiconductor(MIS) And Gate Cut-Off Frequency Device Properties Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Mechanical Stress Gate Insulator Dielectric Layer Sapphire Substrates Proton Radiation Ohmic Contact Enhancement-Mode Gate Bias Stress Two-Step 5 Nm Head Size Bi-Layer T-Gate Performance Degradation Maximum Oscillation Frequency Sheet Resistance 60 Ghz Total Ionizing Dose Effects Proton Irradiation Stress Measurement Dc Output Two-Dimensional Electron Gas(2DEG) Components Technology Electrical Properties(I-V curve) Mobility Behavior Transmission Electron Microscopy(TEM) High Performance Algan/Gan Mis-Hemt Channel Mobility Electrical Characterization Next-Generation Threshold Voltage Shift Transfer Characteristics Plasma Treatment Recessed Gate Rf Characteristics Release Layer Citric Acid Metal Deposition Off-State Subthreshold Slope(SS) Tetramethylammonium Hydroxide Trapped Charge Passivation Layer Compressive Stress Electron Trapping Multi-Purpose Low Noise Amplifier(LNA) Channel Layer Output Characteristics Wet Etching Radiation Tolerance Recess Gate Transfer Technique Gate Capacitance Atomic Force Microscope(AFM) Charge Trapping Compound Semiconductor Hetero-Interface Insulating Layer Algan/Gan Heterostructure Access Region Tensile Stress X-Band Applications Sic Device Hexagonal Boron Nitride(h-BN) Gate Electrode Gan Films Hysteresis Phenomenon Hole Trapping Linear Energy Transfer Microelectronic Devices Atomically Thin Coulomb Scattering Contact Resistance(73.40.Cg) Contact Interface Degradation Mechanism Critical Defects Electrochemical Reaction(ECR) Electrode Process Device Degradation Metal Oxide Semiconductor Mobility Extraction Method Measurement Results Nanometer-Scale O 3 2d Material Target Current I-V Characteristic(Transport property) Transport Characteristics Practical Implementation Satellite Communication System Radiation-Induced Vt Shift Gan On Sic Gaas Mmic Gate Operation Gate Coupling Initialization Vector(IV) Accurate Model Atomic Layer Deposition Chemical Deposition Channel Quality Carrier Transport Capping Layer Coupling Effects Conversion Loss Dc Measurements Dislocation Density Depletion Mode Epitaxial Wafer Etch Profile Noise Figure(NF) Organic Vapor Time Exponent Single-Ended Transistor Characteristics X-Ray Photoelectron Spectroscopy (Xps) Plasma-Enhanced Chemical Vapor Deposition(PECVD) Property Improvement Radiation Resistance Resistive Mixer Radio Frequency (Rf) Performance Saturation Current Fabrication Process Gate Foot Gas Reduction Gate Leakage Current Atomic Force Microscopy (Afm) Cleaning Process Device Layout Dc Characteristics Double-Gate(DG) Etching Process Energy Barrier Edge-Type Measurement Data Scanning Electron Microscopy(S.E.M.) Etching Rate Process Technique Quality Improvement Radio Frequency Applications Rf Application State-Of-The-Art Rf Properties Subthreshold Swing(SS) Fin Width Gan Power Amplifier Gate Control Hydrogen Silsesquioxane Image Rejection Mixer I-V Measurement Interface Quality Mobility Degradation Active Region Current-Voltage Measurements Carrier Transfer Carrier Concentration Contact Area Device Fabrication Dot Pattern Direct Contact Electronics And Optoelectronics Etching Conditions Energy Levels Etching Solution Equivalent Circuit Model(ECM) Non-Uniformity Ohmic Metal On/Off Current Ratio 110 Ghz Wafer-Scale Via-Hole Three-Layered Trap Sites Theoretical Calculation Input Signal Pulsed Mode Quaternary Alloy Van Der Waals Heterostructure Surface Treatment Method Saturation Drain Current Single-Layer Frequency Range Fluorine Ions F Max Gate Voltage Gan Capping Interface Trap Key Device Large-Scale Mim Capacitor As 2 Charging Time Device Characteristics Etch Rates Native Oxide Layer Normally-Off Width Effects Systematic Study Sin Passivation Radiation Effects Van Der Waals Interaction X-Ray Diffraction (Xrd) Iii-Nitrides Applied Bias Ac Stress Comparative Study Capacitance-Voltage Current Density Conversion Gain Degradation Factor Different Modes Digital Etch Direct Current(DC) Dc Current Electron Beam Lithography Energy Dispersive X-Ray Spectroscopy(EDX) Epitaxial Layer Operating Parameters Wideband Operation Spurious Suppression 94 Ghz Gate Length Process Technology Plasma Damage Power Amplifiers(PAs) Spectroscopic Analyses Surface Defects Single-Gate(SG) Frequency Multiplier Gate Resistance High Output Inalas/Ingaas Mhemt Low Annealing Temperature Laser Lift-Off Atomic Force Microcopy Channel Properties Common-Source Displacement Damage Cu Film Deterioration Mechanism Electrical Characteristics Nitride Layer Ohmic Electrode Off-Chip Via Etch Temperature Dependence Si-Based High Power Devices Silicon Nitride Power Losses Power Amplifier Mmic Recess Depth Thin Film Resistor Thermal Conductivity Stress Effects Sic Substrate Stress Conditions Stress Engineering Frequency Properties Improved Performance Lithography Process Manufacturing Processes Actual Operation Aln Substrate Crystalline Quality Charging Effects CF 4 Channel Current Dangling Bonds Defect-Free Drain Voltage Electron Beam Exposure Electrochemical Potential Measuring Channel Ohmic Behavior Various Substrates Substrate Effects Self-Heating Effect(SHE) 28 Ghz 3 V Metalorganic Chemical Vapor Deposition Performance And Reliability Performance Deterioration Recess Etch Xrd Data