ETRI-Knowledge Sharing Plaform

Gan-Based Device Performance Algan/Gan Hemts Drain Current W-Band Radiation Hardness Carrier Mobility Metamorphic High Electron Mobility Transistor(mHEMT) Proton Radiation T-Shaped Gate Cut-Off Frequency Gate Insulator Microwave Monolithic Integrated Circuits(MMIC) Microwave Integrated Circuit Gate Recess T-Gate Stress Measurement Ohmic Contact Two-Step 5 Nm Metal-Insulator-Semiconductor(MIS) Proton Irradiation Channel Layer Head Size 60 Ghz Maximum Oscillation Frequency Sapphire Substrates Gate Bias Stress High Performance Trapped Charge Gan Nanowire Citric Acid And Gate Sensor Device Wet Etching Gas Sensors Bi-Layer Device Properties Low Noise Amplifier(LNA) Output Characteristics Performance Degradation Recess Gate Radiation Tolerance Gate Capacitance Iii-Nitrides Thin Film Resistor Total Ionizing Dose Effects Breakdown Voltage(BDV) Hetero-Interface Insulating Layer X-Band Applications Radar Applications Two-Dimensional Electron Gas(2DEG) Dc Output Dielectric Layer Hexagonal Boron Nitride(h-BN) Threshold Voltage Shift Electrical Properties(I-V curve) Atomically Thin Trend Of Increasing Target Current Transmission Electron Microscopy(TEM) Gate Electrode Satellite Communication System Gan Films Contact Interface Microelectronic Devices Measurement Results Mobility Behavior Molecular Beam Epitaxy(MBE) Coulomb Scattering Critical Defects Electrochemical Reaction(ECR) Electrode Process Defect Analysis Device Degradation Degradation Mechanism Nanometer-Scale Hysteresis Phenomenon Linear Energy Transfer Practical Implementation 2d Material Vt Shift Electrical Characterization Gan On Sic Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Next-Generation Band 3 Conversion Loss Epitaxial Wafer Noise Figure(NF) Initialization Vector(IV) Property Improvement Power Switching Plasma Treatment Resistive Mixer Rf Characteristics Radio Frequency (Rf) Performance Radiation Resistance Time Exponent Single-Ended Etching Rate Electronic Materials Fabrication Process Tetramethylammonium Hydroxide Gate Foot Gate Dielectric Gas Reduction Metal Deposition Device Layout Etching Process Energy Barrier Dc Characteristics Passivation Layer Fe-Doped Single Crystal Radio Frequency Applications State-Of-The-Art Rf Properties Rf Application Scanning Electron Microscopy(S.E.M.) Subthreshold Slope(SS) Etching Solution Electron Trapping Equivalent Circuit Model(ECM) Image Rejection Mixer 110 Ghz Mobility Degradation Contact Area Compressive Stress Device Fabrication Current-Voltage Measurements Electronics And Optoelectronics Etching Conditions Energy Levels Dot Pattern Direct Contact Non-Uniformity High-Voltage And High-Power Hydrogen Silsesquioxane Input Signal I-V Measurement Ku-Band Ohmic Metal Quaternary Alloy Wafer-Scale Pulsed Mode Rf Power Gan Hemt Technology Theoretical Calculation Three-Layered Trap Sites Van Der Waals Heterostructure Semi-Insulating Single-Layer Etch Rates Frequency Range As 2 Gate Voltage Fluorine Ions Material Properties Charging Time Device Characteristics Interface Trap Key Device Large-Scale Oxide-Semiconductor Field-Effect Transistors Radiation Effects Van Der Waals Interaction Si-Doped Systematic Study Sin Passivation Epitaxial Layer Energy Dispersive X-Ray Spectroscopy(EDX) Ac Stress Gate Length 94 Ghz Off-State Breakdown Mechanical Stress Current Density Conversion Gain Direct Current(DC) Dc Current Electron Beam Lithography Degradation Factor Process Technology Power Amplifiers(PAs) Spectroscopic Analyses Surface Defects Sheet Resistance Spurious Suppression Electrical Characteristics Thermal Conductivity Tensile Stress Gate Resistance Frequency Multiplier Access Region Algan/Gan Heterostructure Atomic Force Microcopy Common-Source Cu Film Deterioration Mechanism Displacement Damage High Output High Power Devices Inalas/Ingaas Mhemt Linear Trend Low Annealing Temperature Laser Lift-Off Off-Chip Power Losses Ohmic Electrode Power Amplifier Mmic Field Plate Switching Device Recess Depth Temperature Dependence Si-Based Electrochemical Potential Enhancement-Mode Actual Operation Technology Trends Frequency Properties Metalorganic Chemical Vapor Deposition Manufacturing Processes Measuring Channel Aln Substrate Channel Current Dangling Bonds Charging Effects Drain Voltage Electron Beam Exposure Nicr Thin Film Improved Performance Lithography Process X-Ray Topography Ohmic Behavior 28 Ghz Performance And Reliability Performance Deterioration Recess Etch Various Substrates Self-Heating Effect(SHE) Substrate Effects