ETRI-Knowledge Sharing Plaform

Gan-Based Device Performance Algan/Gan Hemts Drain Current W-Band Radiation Hardness Carrier Mobility Metamorphic High Electron Mobility Transistor(mHEMT) Proton Radiation T-Shaped Gate Cut-Off Frequency Gate Insulator Microwave Monolithic Integrated Circuits(MMIC) Microwave Integrated Circuit Gate Recess T-Gate Stress Measurement Ohmic Contact Two-Step 5 Nm Metal-Insulator-Semiconductor(MIS) Proton Irradiation Channel Layer Head Size 60 Ghz Maximum Oscillation Frequency High Performance Gate Bias Stress Citric Acid Trapped Charge Gan Nanowire And Gate Sensor Device Bi-Layer Device Properties Wet Etching Recess Gate Radiation Tolerance Gas Sensors Low Noise Amplifier(LNA) Output Characteristics Performance Degradation Gate Capacitance Iii-Nitrides Breakdown Voltage(BDV) Total Ionizing Dose Effects Thin Film Resistor Radar Applications Hetero-Interface Insulating Layer X-Band Applications Dielectric Layer Dc Output Two-Dimensional Electron Gas(2DEG) Sapphire Substrates Hexagonal Boron Nitride(h-BN) Threshold Voltage Shift Atomically Thin Critical Defects Coulomb Scattering Device Degradation Defect Analysis Electrode Process Degradation Mechanism Electrical Properties(I-V curve) Trend Of Increasing Target Current Transmission Electron Microscopy(TEM) Satellite Communication System Contact Interface Electrochemical Reaction(ECR) Vt Shift Gan Films Gate Electrode Hysteresis Phenomenon Microelectronic Devices Linear Energy Transfer Molecular Beam Epitaxy(MBE) Measurement Results Mobility Behavior Nanometer-Scale Practical Implementation 2d Material Band 3 Conversion Loss Epitaxial Wafer Electrical Characterization Single-Ended Resistive Mixer Rf Characteristics Radio Frequency (Rf) Performance Radiation Resistance Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Gan On Sic Initialization Vector(IV) Noise Figure(NF) Next-Generation Property Improvement Power Switching Plasma Treatment Time Exponent Device Layout Energy Barrier Etching Process Dc Characteristics Electronic Materials Etching Rate Tetramethylammonium Hydroxide Single Crystal Scanning Electron Microscopy(S.E.M.) Subthreshold Slope(SS) Radio Frequency Applications State-Of-The-Art Rf Properties Rf Application Fabrication Process Fe-Doped Gate Dielectric Gas Reduction Gate Foot Metal Deposition Passivation Layer Contact Area Compressive Stress Current-Voltage Measurements Device Fabrication Electronics And Optoelectronics Energy Levels Etching Conditions Dot Pattern Direct Contact Electron Trapping Equivalent Circuit Model(ECM) Etching Solution Semi-Insulating Single-Layer Gan Hemt Technology Rf Power 110 Ghz Wafer-Scale Van Der Waals Heterostructure High-Voltage And High-Power Hydrogen Silsesquioxane Image Rejection Mixer Input Signal I-V Measurement Ku-Band Mobility Degradation Non-Uniformity Ohmic Metal Quaternary Alloy Pulsed Mode Theoretical Calculation Trap Sites Three-Layered As 2 Device Characteristics Etch Rates Systematic Study Si-Doped Sin Passivation Radiation Effects Charging Time Van Der Waals Interaction Fluorine Ions Frequency Range Gate Voltage Interface Trap Key Device Large-Scale Material Properties Oxide-Semiconductor Field-Effect Transistors Ac Stress Current Density Conversion Gain Direct Current(DC) Dc Current Degradation Factor Epitaxial Layer Energy Dispersive X-Ray Spectroscopy(EDX) 94 Ghz Sheet Resistance Spurious Suppression Spectroscopic Analyses Surface Defects Electron Beam Lithography Power Amplifiers(PAs) Gate Length Mechanical Stress Process Technology Off-State Breakdown Algan/Gan Heterostructure Atomic Force Microcopy Access Region Cu Film Common-Source Deterioration Mechanism Displacement Damage Electrical Characteristics Tensile Stress Thermal Conductivity Switching Device Si-Based Recess Depth Power Amplifier Mmic Field Plate Frequency Multiplier Gate Resistance High Output High Power Devices Inalas/Ingaas Mhemt Linear Trend Low Annealing Temperature Laser Lift-Off Power Losses Ohmic Electrode Off-Chip Temperature Dependence Actual Operation Aln Substrate Charging Effects Dangling Bonds Drain Voltage Electron Beam Exposure Enhancement-Mode Electrochemical Potential Technology Trends Self-Heating Effect(SHE) Recess Etch Channel Current Various Substrates Substrate Effects Frequency Properties Improved Performance Lithography Process Metalorganic Chemical Vapor Deposition Manufacturing Processes Measuring Channel Nicr Thin Film Ohmic Behavior X-Ray Topography Performance And Reliability Performance Deterioration 28 Ghz