ETRI-Knowledge Sharing Plaform

Algan/Gan Heterostructure Normally-Off Gan-Based Schottky Barrier Diode(SBD) Gan Heterostructures Sapphire Substrates High Electron Mobility Transistor(HEMT) Cvd Diamond High Frequency(HF) Field Plate Dry Etching High Power Applications Gan On Sic High Performance Low-Rate Drain Current Etching Conditions Rf Applications Recess Depth Gan Fet Leakage Current Thin Film Solar Cells Etching Rate Thermal Properties Diamond Substrate Gan Device High Efficiency Large-Scale Thermal Behavior Current Density Gate Recess High Power Performance Algan/Gan-On-Si Turn-On Threshold Voltage Etch-Stop Stimulated Emission Ultraviolet Laser Diode Release Layer Boron Nitride(BN) Design And Simulation Recessed Gate Proton Radiation Off-State Leakage Recent Progress Gate Dielectric Gan Power Device High Breakdown Voltage Mole Fraction Waveguide Structure Multi-Purpose Voltage Characteristics Transfer Technique Bi-Layer Fabrication And Characterization Gate Voltage Gan-On-Diamond Point Defects Vertical Gan Iii-Nitrides Light-Emitting Diodes (Leds) Maximum Oscillation Frequency Silicon Substrate Optoelectronic Devices Carrier Mobility Power Electronics Patterned Sapphire Substrate Radiation Hardness Blocking Voltage Channel Length Crack-Free Ultraviolet Light-Emitting Diodes Gan Templates Stress Measurement Thermal Diffusion Research And Development C-V Characteristics Characteristic Temperature Critical Electric Field Coulomb Scattering Critical Defects DC-AC Doping Density Defect Analysis Electron Temperature Electrical Properties(I-V curve) Gan Surface Gan Mis-Hemt Heat Dissipation Gan Films Injection Current Inductively Coupled Plasma Etching Low Growth Temperature Power Gain Positive And V/Iii Ratio Ultraviolet (Uv) Light-Emitting Diodes Window Layer Plasma Treatment Rf Power Amplifier Absorption Coefficients Control Gate Co. Kgaa Dc-Dc Dislocation Density Finite Element Method(FEM) Fine Control Growth And Characterization Guided Modes Junction Temperature Interfacial Properties Lateral Growth Renewable Energy(RE) Pinch-Off Pin Diode Property Improvement Plasma-Assisted 300 Ghz Self-Consistent Two-Step Technology Infrastructure Optical Confinement Factor Trapped Charge Rf Properties Annealing Process Crystal Quality Cooling Needs Drain Electrode Dissipation Model Energy Market Experimental Data Fabrication Process Highly Efficient Gan Semiconductor Harsh Environments High Voltage Applications High Temperature Characterization Ingan/Gan Multiple Quantum Well Mini-Modules Electronic Materials State-Of-The-Art Single Crystal 525 Nm Size Reduction Power Conversion Modules Turn-On Voltage Tetramethylammonium Hydroxide Three Dimensional(3D) UV-LED Atomic Layer Deposition Method Optically Pumped Surface Mount Device Semiconductor Structures Surface Traps Different Substrates Floating Gate Infrastructure Support Low Damage Multi-Quantum-Well Low Specific On-Resistance Model-Based Metal-Insulator-Semiconductor(MIS) Single-Layer Polarization Effect Power And Frequency(HVPF) Pulsed Mode Wafer-Scale Uv Laser Spontaneous Polarization Short-Circuit Current Surface Reflection 7 Mm As 2 Area Light Systematic Study Open Technology Power Transistor Tunable Bandgap Theoretical Model Algan/Gan Hemts Diamond Semiconductor Device Performance Etch Rates Fluorine Ions Efficiency Enhancement Green Light High Thermal Conductivity I-Zno Key Device Low Contact Resistance Material Properties Rear Surface Spectral Properties Second Step Schottky Contacts Power Semiconductor Devices Performance Degradation Wave Equation Ultraviolet A Solar Cell Efficiency Thermal Characteristics Thermal Resistance Wafer Dicing Capacitance-Voltage Cds Film Cigs Solar Cell Crossing Effect Diamond Heat Spreader Degradation Factor Exchange-Correlation Fin-Gate Green Led High Voltage Operation Insertion Layer Low Pressure Maximum Output Power Mocvd Growth Numerical Methods Sheet Resistance Selective Area Growth Power Electronic Applications Power System Plasma Damage Power Amplifiers(PAs) Vertical Growth Various Conditions Structure Parameters Surface Texturing Temperature-Dependent Wide Bandgap Semiconductor Stop Layer Output Power Density Sic Substrate Access Region Au-Free Computer Vision(CV) Current Collapse Cu Film Development Trends Edge Contact Efficiency And Power Electrical Characteristics Gate-To-Drain Spacing Growth Rate Gate Insulator Gan Substrate Hetero-Interface Indium Tin Oxide(ITO) Insulating Layer Limiting Factor Laser Lift-Off Mqw Structure Metal Electrode Maximum Frequency Short Wavelength Large Chip Plasma Etching Process Voltage Shift Vth Shift Structural Parameters Temperature Optimization Smooth Morphology Optical Pumping Substrate Effects Two-Dimensional Electron Gas(2DEG) Technology Trends Radio Frequency (Rf) Surface Treatments Surface Oxide Al Thin Films Aln Substrate Blue Leds Current Gain Cutoff Frequency Dual Gate(DG) Drain Voltage Dielectric Layer Forward Voltage Method Enhancement-Mode Growth Mode High Speed High Electric Field Interface Trap Density Large Area Improved Performance Low Loss Metalorganic Chemical Vapor Deposition Metal-Organic Chemical Vapour Deposition(MOCVD) Multi-Step Relative Ratio Si Substrate Self-Heating Effect(SHE) Simulation Results System Size Photoluminescence Characteristics P-Type Gan Various Substrates Subband Energies X-Ray Topography