ETRI-Knowledge Sharing Plaform

Normally-Off Gan-Based Algan/Gan Heterostructure Sapphire Substrates Gan Heterostructures Schottky Barrier Diode(SBD) High Electron Mobility Transistor(HEMT) Thin Film Solar Cells Semiconductor Device Drain Current Field Plate Recess Depth Crack-Free Radiation Hardness Dry Etching Leakage Current Power Density Stimulated Emission Ultraviolet Laser Diode Boron Nitride(BN) Low-Rate Proton Radiation Recessed Gate Release Layer Design And Simulation Gate Dielectric Mole Fraction Recent Progress Waveguide Structure Cvd Diamond Etching Conditions Multi-Purpose Rf Power Thermal Properties Bi-Layer Fabrication And Characterization Vertical Gan Point Defects Transfer Technique Thermal Behavior Current Density Iii-Nitrides Light-Emitting Diodes (Leds) Silicon Substrate Carrier Mobility Gan Fet Gate Recess High Power Applications Patterned Sapphire Substrate Absorption Coefficient C-V Characteristics Characteristic Temperature Critical Defects Coulomb Scattering Doping Density Electron Temperature Electrical Properties(I-V curve) Etch-Stop Gan Templates Gan Surface Gan Mis-Hemt Heat Dissipation Injection Current Low Growth Temperature Stress Measurement Ultraviolet Light-Emitting Diodes Turn-On Threshold Voltage V/Iii Ratio Gan Films Defect Analysis Junction Temperature Co. Kgaa Dislocation Density Finite Element Method(FEM) Guided Modes Fine Control Gan On Sic Growth And Characterization High Performance Interfacial Properties Lateral Growth Plasma-Assisted Pin Diode Property Improvement Self-Consistent Two-Step Ultraviolet (Uv) Light-Emitting Diodes Window Layer Control Gate Plasma Treatment 10 Ghz Annealing Process Crystal Quality Drain Electrode Dissipation Model Experimental Data Electronic Materials Etching Rate Gan Power Device Highly Efficient High Temperature Characterization Ingan/Gan Multiple Quantum Well High Breakdown Voltage High Voltage Applications Inductively-Coupled Plasma(ICP) Mini-Modules Off-State Leakage Power Semiconductor Rf Properties Single Crystal Tetramethylammonium Hydroxide Three Dimensional(3D) Technology Infrastructure Trapped Charge 525 Nm Optical Confinement Factor Atomic Layer Deposition Method Diamond Substrate Floating Gate Infrastructure Support Low Damage Multi-Quantum-Well Model-Based Low Specific On-Resistance Metal-Insulator-Semiconductor(MIS) Optically Pumped Pulsed Mode Surface Traps Surface Mount Device Surface Reflection Spontaneous Polarization Short-Circuit Current Single-Layer UV-LED Uv Laser Voltage Characteristics Wafer-Scale Polarization Effect As 2 Area Light Algan/Gan Hemts Capacitance-Voltage Characterization(CV) Device Performance Efficiency Enhancement Gate Voltage Green Light Gan Device High Efficiency Gan-On-Diamond I-Zno Key Device Low Contact Resistance Open Technology Power Transistor Performance Degradation Rear Surface Second Step Schottky Contacts Spectral Properties Solar Cell Efficiency Systematic Study Thermal Characteristics Thermal Resistance Theoretical Model Ultraviolet A Wave Equation Etch Rates Fluorine Ions Various Conditions Temperature-Dependent Crossing Effect Cds Film Cigs Solar Cell Degradation Factor Diamond Heat Spreader Exchange-Correlation Green Led Fin-Gate Insertion Layer Low Pressure Metal-Oxide-Semiconductor Structures Maximum Output Power Numerical Methods Maximum Oscillation Frequency Plasma Damage Selective Area Growth Structure Parameters Surface Texturing Sheet Resistance Vertical Growth Wafer Dicing Mocvd Growth Access Region Computer Vision(CV) Cu Film Current Collapse Efficiency And Power Electrical Characteristics Gan Substrate Growth Rate Gate Insulator Hetero-Interface Indium Tin Oxide(ITO) Insulating Layer Laser Lift-Off Large Chip Mqw Structure Maximum Frequency Optoelectronic Devices Power Electronics Structural Parameters Stop Layer Temperature Optimization Thermal Conductivity Al Thin Films Aln Substrate Blocking Voltage Blue Leds Current Gain Cutoff Frequency Dual Gate(DG) Drain Voltage Dielectric Layer Forward Voltage Method Enhancement-Mode Growth Mode Interface Trap Density Improved Performance Large Area Metalorganic Chemical Vapor Deposition Metal-Organic Chemical Vapour Deposition(MOCVD) Multi-Step Optical Pumping Photoluminescence Characteristics P-Type Gan Relative Ratio Surface Treatments Surface Oxide Simulation Results Subband Energies Substrate Effects Self-Heating Effect(SHE) Smooth Morphology Technology Trends Various Substrates X-Ray Topography