ETRI-Knowledge Sharing Plaform

Algan/Gan Heterostructure Normally-Off Gan-Based Gan Heterostructures Field Effect Transistor(FET) Schottky Barrier Diode(SBD) High-Electron Mobility Transistor(HEMT) Cvd Diamond Vertical Gan High Frequency(HF) Deep Uv Field Plate Quantum Wells Recess Depth Learning Technology Low-Rate Leakage Current High Performance Drain Current High Efficiency Gan Power Device Dry Etching Uv Laser High Power Applications Etching Conditions Gan On Sic Rf Applications Gan Fet Gan Device Thermal Properties Current Density Thermal Behavior Pin Diode Gate Recess Algan/Gan-On-Si Diamond Substrate Data Center Large-Scale Epitaxial Growth High Power Performance Etching Rate Thin Film Solar Cells Optoelectronic Devices Recessed Gate UV-LED Growth Analysis High Breakdown Voltage Gate Voltage Maximum Oscillation Frequency Crack-Free Multi-Purpose Turn-On Threshold Voltage Proton Radiation Recent Progress Blocking Voltage Iii-Nitride Power Amplifiers(PAs) Fabrication And Characterization Voltage Characteristics Algan/Gan Hemts Boron Nitride Power Electronics Gate Dielectric Mole Fraction Stimulated Emission Semiconductor Technology Off-State Leakage Waveguide Structure Ultraviolet Laser Diode Release Layer Carrier Mobility Etch-Stop Gan Hemt Technology Energy-Efficient Channel Length Point Defects Radiation Hardness Design And Simulation Gan-On-Diamond Light-Emitting Diodes (Leds) Bi-Layer Transfer Technique Silicon Substrate Electrical Characteristics Patterned Sapphire Substrates(PSS) Green Light-Emitting Diodes Self-Consistent Diamond Semiconductor Wide Bandgap Semiconductor Finite-Element Method(FEM) Low Growth Temperature Power Semiconductor Devices Sic Substrate Material Properties Stress Measurement Wafer Dicing Core Devices High Speed Plasma Damage Photoluminescence Characteristics Ultraviolet Light-Emitting Diodes Harsh Environment Surface Traps Hybrid Semiconductor Ingan/Gan Multiple Quantum Well Pinch-Off Plasma-Assisted Window Layer Turn-On Voltage High Voltage Applications Laser Lift-Off(LLO) Optically Pumped Plasma Etching Process Atomic Layer Deposition Method Device Applications Fine Control Al Thin Films Assisted Growth Color Display Device Performance Rf Properties Wave Equation X-Band Current Collapse Low Defect Surface Treatments Surface Texturing Various Conditions Absorption Coefficient Electron Temperature Size Reduction Vertical Growth Cooling Needs Indium Tin Oxide(ITO) Set Up Ultraviolet (Uv) Light-Emitting Diodes Diamond Heat Spreader Multi-Quantum-Well Dc-Dc Dissipation Model Low Loss Power Transistors Power Conversion Modules 2d Material Electrical Module High Voltage Operation As 2 C-V Characteristics Critical Defects Gate Insulator Output Power Density Second Step Surface Reflection Drain Electrode Dielectric Layer Low Pressure Research And Development(R&D) Solar Cell Efficiency High-Quality Maximum Frequency Technology Trends Temperature Optimization Current Gain Cutoff Frequency Degradation Factor Large Chip Metal-Insulator-Semiconductor(MIS) Optical Confinement Factor Fin-Gate Metal-Organic Chemical Vapour Deposition(MOCVD) Mocvd Growth Open Technology Temperature-Dependent Au-Free Characteristic Temperature Voltage Shift Gan Films Insulating Layer Wafer-Scale Co. Kgaa High Thermal Conductivity Implementation Technology State-Of-The-Art Access Region Pulsed Mode Power Switching Structural Parameters Crossing Effect Insertion Layer Large Area Semiconductor Structures Various Substrates Smart Data Tunable Bandgaps Gan Substrate Infrastructure Support Surface Oxide Tetramethylammonium Hydroxide Efficiency And Power Defect Density Green Led Power Amplifier Mmic Stop Layer Electrical Properties High Electric Field Gate-To-Drain Spacing High Power Devices Dislocation Density Radio Frequency (Rf) Surface Mount Device Short-Circuit Current Cds Film Enhancement Mode(E-mode) Low Specific On-Resistance Polarization Effect Simulation Results Metal Electrode Low Contact Resistance Heat Dissipation Inductively Coupled Plasma Etching Experimental Analysis Gan Semiconductor Multi-Step Cigs Solar Cell Aln Substrate Blue Leds Critical Electric Field Coulomb Scattering Forward Voltage Method Drain Voltage Gan Templates Mini-Modules Two-Step Band 3 Development Trends Gan Surface Spontaneous Polarization Numerical Methods Fluorine Ions Growth Mode Guided Modes Short Wavelength Thermal Characteristics Two-Dimensional Electron Gas(2DEG) Flip-Chip(FC) Interfacial Properties Key Device P-Type Gan Si Substrate 525 Nm Trapped Charge Doping Density Efficiency Enhancement Injection Current Performance Evaluation V/Iii Ratio Three Dimensional(3D) Cu Film Defect Analysis Edge Contact Lateral Growth Performance Degradation Structure Parameters Crystal Quality Limiting Factor Mqw Structure Technology Infrastructure Computer Vision(CV) Maximum Output Power Electric Vehicles(EV) Electrical Enhancement Power Gain Ultraviolet A Thermal Resistance Thermal Diffusion Area Light Dual Gate(DG) Key Components Relative Ratio Rear Surface Positive And System Size Smooth Morphology Control Gate Fabrication Process Hetero-Interface Improved Performance Self-Heating Effect(SHE) Energy Market Different Substrates Low Damage Spectral Properties Schottky Contacts 300 Ghz Power And Frequency(HVPF) Renewable Energy Selective Area Growth X-Ray Topography Highly Efficient Junction Temperature Sheet Resistance Theoretical Model Etch Rates Power Electronic Applications Systematic Study Capacitance-Voltage Floating Gate Optical Pumping DC-AC High Temperature Characterization Vth Shift Wireless Internet Power System Rf Power Amplifier Growth And Characterization Interface Trap Density(Nit) Model-Based Low-Noise Amplifier(LNA) Single-Layer Substrate Effects Experimental Data Annealing Process Growth Rate Metalorganic Chemical Vapor Deposition Surface Refinement Electronic Materials Communication Device Gan Mis-Hemt Plasma Treatment Property Improvement 7 Mm Exchange-Correlation I-Zno Subband Energies Single Crystal