ETRI-Knowledge Sharing Plaform

Algan/Gan Heterostructure Normally-Off Gan-Based Gan Heterostructures Field Effect Transistor(FET) Schottky Barrier Diode(SBD) High-Electron Mobility Transistor(HEMT) Cvd Diamond Vertical Gan High Frequency(HF) Deep Uv Field Plate Quantum Wells Recess Depth Learning Technology Low-Rate Leakage Current High Performance Drain Current High Efficiency Gan Power Device Dry Etching Uv Laser Etching Conditions High Power Applications Gan On Sic Rf Applications Gan Fet Gan Device Thermal Properties Current Density Thermal Behavior Pin Diode Power Amplifiers(PAs) Gate Recess Algan/Gan-On-Si Diamond Substrate Data Center Large-Scale Epitaxial Growth Gan Hemt Technology High Power Performance Etching Rate Thin Film Solar Cells Patterned Sapphire Substrates(PSS) Recessed Gate UV-LED Growth Analysis High Breakdown Voltage X-Band Gate Voltage Maximum Oscillation Frequency Crack-Free Multi-Purpose Turn-On Threshold Voltage Proton Radiation Recent Progress Blocking Voltage Iii-Nitride Fabrication And Characterization Algan/Gan Hemts Boron Nitride Voltage Characteristics Power Electronics Gate Dielectric Mole Fraction Stimulated Emission Off-State Leakage Semiconductor Technology Waveguide Structure Ultraviolet Laser Diode Release Layer Carrier Mobility Etch-Stop Energy-Efficient Channel Length Point Defects Radiation Hardness Design And Simulation Gan-On-Diamond Light-Emitting Diodes (Leds) Bi-Layer Low-Noise Amplifier(LNA) Transfer Technique Silicon Substrate Electrical Characteristics Optoelectronic Devices Green Light-Emitting Diodes Self-Consistent Wide Bandgap Semiconductor Diamond Semiconductor Finite-Element Method(FEM) Low Growth Temperature Power Semiconductor Devices Sic Substrate Material Properties Stress Measurement Wafer Dicing Core Devices High Speed Plasma Damage Photoluminescence Characteristics Harsh Environment Ultraviolet Light-Emitting Diodes Surface Traps Ingan/Gan Multiple Quantum Well Hybrid Semiconductor Pinch-Off Plasma-Assisted Window Layer Turn-On Voltage High Voltage Applications Laser Lift-Off(LLO) Optically Pumped Plasma Etching Process Atomic Layer Deposition Method Device Applications Fine Control Al Thin Films Assisted Growth Color Display Device Performance Rf Properties Wave Equation Current Collapse Low Defect Surface Treatments Surface Texturing 10 Ghz Various Conditions Absorption Coefficient Electron Temperature Size Reduction Cooling Needs Indium Tin Oxide(ITO) Vertical Growth Diamond Heat Spreader Multi-Quantum-Well Ultraviolet (Uv) Light-Emitting Diodes Set Up Power Conversion Modules Dissipation Model Dc-Dc Low Loss Power Transistors 2d Material As 2 C-V Characteristics Critical Defects Electrical Module Gate Insulator High Voltage Operation Output Power Density Second Step Surface Reflection Drain Electrode Dielectric Layer Low Pressure Research And Development(R&D) Solar Cell Efficiency High-Quality Maximum Frequency Technology Trends Temperature Optimization Current Gain Cutoff Frequency Degradation Factor Large Chip Metal-Insulator-Semiconductor(MIS) Optical Confinement Factor Fin-Gate Metal-Organic Chemical Vapour Deposition(MOCVD) Mocvd Growth Open Technology Au-Free Characteristic Temperature Temperature-Dependent Gan Films Insulating Layer Voltage Shift Wafer-Scale Co. Kgaa High Thermal Conductivity Implementation Technology State-Of-The-Art Access Region Pulsed Mode Power Switching Structural Parameters Crossing Effect Insertion Layer Large Area Semiconductor Structures Various Substrates Tunable Bandgaps Gan Substrate Infrastructure Support Surface Oxide Smart Data Defect Density Efficiency And Power Green Led Power Amplifier Mmic Stop Layer Tetramethylammonium Hydroxide Electrical Properties Gate-To-Drain Spacing High Electric Field High Power Devices Dislocation Density Surface Mount Device Radio Frequency (Rf) Short-Circuit Current Cds Film Enhancement Mode(E-mode) Low Specific On-Resistance Polarization Effect Simulation Results Metal Electrode Low Contact Resistance Heat Dissipation Inductively Coupled Plasma Etching Experimental Analysis Gan Semiconductor Multi-Step Cigs Solar Cell Aln Substrate Blue Leds Critical Electric Field Coulomb Scattering Forward Voltage Method Frequency Range Drain Voltage Gan Templates Mini-Modules Band 3 Development Trends Gan Surface Spontaneous Polarization Two-Step Fluorine Ions Growth Mode Guided Modes Numerical Methods Short Wavelength Two-Dimensional Electron Gas(2DEG) Flip-Chip(FC) Interfacial Properties Key Device P-Type Gan Si Substrate Thermal Characteristics Trapped Charge 525 Nm Doping Density Efficiency Enhancement Injection Current Performance Evaluation Cu Film Edge Contact Defect Analysis Lateral Growth V/Iii Ratio Performance Degradation Structure Parameters Three Dimensional(3D) Crystal Quality Limiting Factor Mqw Structure Computer Vision(CV) Maximum Output Power Technology Infrastructure Electric Vehicles(EV) Electrical Enhancement Power Gain Thermal Diffusion Area Light Dual Gate(DG) Key Components Ultraviolet A Relative Ratio Thermal Resistance Positive And Rear Surface System Size Smooth Morphology Control Gate Fabrication Process Hetero-Interface Improved Performance Self-Heating Effect(SHE) Energy Market Different Substrates Low Damage Spectral Properties Schottky Contacts 300 Ghz Power And Frequency(HVPF) Renewable Energy Selective Area Growth Highly Efficient Junction Temperature X-Ray Topography Sheet Resistance Theoretical Model Etch Rates Systematic Study Power Electronic Applications Capacitance-Voltage Floating Gate Noise Figure Optical Pumping DC-AC High Temperature Characterization Vth Shift Wireless Internet Power System Rf Power Amplifier Front-End Growth And Characterization Interface Trap Density(Nit) Model-Based One Chip Substrate Effects Single-Layer Annealing Process Experimental Data Growth Rate Metalorganic Chemical Vapor Deposition Surface Refinement Communication Device Electronic Materials Gan Mis-Hemt Plasma Treatment Property Improvement 7 Mm Exchange-Correlation I-Zno Subband Energies Single Crystal