ETRI-Knowledge Sharing Plaform

Algan/Gan Heterostructure Normally-Off Gan-Based Sapphire Substrates Gan Heterostructures Schottky Barrier Diode(SBD) High Electron Mobility Transistor(HEMT) Cvd Diamond Field Plate High Frequency(HF) Leakage Current Recess Depth Low-Rate Gan On Sic High Performance Drain Current Etching Conditions Rf Applications Gan Fet High Power Applications Dry Etching Thin Film Solar Cells Pin Diode Etching Rate Diamond Substrate Thermal Properties Large-Scale Gan Device High Efficiency Vertical Gan Current Density Thermal Behavior Gate Recess High Power Performance Algan/Gan-On-Si Crack-Free Radiation Hardness Turn-On Threshold Voltage Ultraviolet Laser Diode Stimulated Emission Boron Nitride(BN) Design And Simulation Release Layer Proton Radiation Recessed Gate Mole Fraction Off-State Leakage Gan Power Device Gate Dielectric High Breakdown Voltage Recent Progress Waveguide Structure Multi-Purpose Voltage Characteristics Algan/Gan Hemts Bi-Layer Fabrication And Characterization Gate Voltage Gan-On-Diamond Point Defects Transfer Technique Light-Emitting Diodes (Leds) Maximum Oscillation Frequency Silicon Substrate Iii-Nitrides Optoelectronic Devices Patterned Sapphire Substrate Carrier Mobility Electrical Characteristics Power Electronics Blocking Voltage Channel Length Etch-Stop Low Growth Temperature Stress Measurement C-V Characteristics Characteristic Temperature Coulomb Scattering Critical Electric Field DC-AC Defect Analysis Doping Density Electrical Properties(I-V curve) Gan Films Gan Surface Gan Mis-Hemt Gan Templates Heat Dissipation Injection Current Inductively Coupled Plasma Etching Thermal Diffusion Research And Development 2d Material Electron Temperature Critical Defects Power Gain Positive And Ultraviolet Light-Emitting Diodes V/Iii Ratio Lateral Growth Two-Step Absorption Coefficients Assisted Growth Control Gate Co. Kgaa Dislocation Density Dc-Dc Junction Temperature Fine Control Finite Element Method(FEM) Guided Modes Growth And Characterization Interfacial Properties 300 Ghz Window Layer Pinch-Off Plasma Treatment Rf Power Amplifier Self-Consistent Property Improvement Plasma-Assisted Ultraviolet (Uv) Light-Emitting Diodes Renewable Energy(RE) Mini-Modules Optical Confinement Factor Three Dimensional(3D) Tetramethylammonium Hydroxide State-Of-The-Art Single Crystal Annealing Process Crystal Quality Cooling Needs Drain Electrode Dissipation Model Experimental Data Electronic Materials Energy Market Gan Semiconductor Fabrication Process High Temperature Characterization Harsh Environments Highly Efficient Ingan/Gan Multiple Quantum Well High Voltage Applications Turn-On Voltage Trapped Charge Power Conversion Modules Rf Properties Technology Infrastructure Communication Device 525 Nm Size Reduction Low Damage Low Specific On-Resistance Model-Based Metal-Insulator-Semiconductor(MIS) Optically Pumped Single-Layer Surface Reflection Atomic Layer Deposition Method Different Substrates Floating Gate Infrastructure Support Polarization Effect Power Transistors Spontaneous Polarization Short-Circuit Current Surface Traps Multi-Quantum-Well Power And Frequency(HVPF) Pulsed Mode Uv Laser UV-LED Semiconductor Structures Surface Mount Device Wafer-Scale Key Device Low Contact Resistance Material Properties Open Technology Thermal Characteristics Thermal Resistance Systematic Study Solar Cell Efficiency As 2 Area Light Diamond Semiconductor Device Performance Device Applications Efficiency Enhancement Etch Rates Fluorine Ions Green Light High Thermal Conductivity I-Zno Tunable Bandgap Theoretical Model Power Semiconductor Devices Rear Surface Performance Degradation Ultraviolet A Schottky Contacts Spectral Properties Second Step 7 Mm Wave Equation Low Pressure Maximum Output Power Mocvd Growth Numerical Methods Plasma Damage Temperature-Dependent Sheet Resistance Surface Texturing Capacitance-Voltage Cds Film Cigs Solar Cell Crossing Effect Diamond Heat Spreader Degradation Factor Exchange-Correlation Fin-Gate Green Led High Voltage Operation Insertion Layer Wafer Dicing Power Electronic Applications Power System Structure Parameters Vertical Growth Power Amplifiers(PAs) Selective Area Growth Various Conditions Large Chip Limiting Factor Laser Lift-Off Mqw Structure Metal Electrode Maximum Frequency Output Power Density Short Wavelength Stop Layer Sic Substrate Au-Free Access Region Computer Vision(CV) Current Collapse Cu Film Development Trends Edge Contact Efficiency And Power Gate Insulator Gate-To-Drain Spacing Growth Rate Gan Substrate Hetero-Interface High Power Devices Insulating Layer Indium Tin Oxide(ITO) Wide Bandgap Semiconductor Temperature Optimization Structural Parameters Plasma Etching Process Voltage Shift Vth Shift Large Area Low Loss Metalorganic Chemical Vapor Deposition Metal-Organic Chemical Vapour Deposition(MOCVD) Optical Pumping Substrate Effects Self-Heating Effect(SHE) Smooth Morphology Si Substrate Al Thin Films Aln Substrate Blue Leds Current Gain Cutoff Frequency Dual Gate(DG) Drain Voltage Dielectric Layer Enhancement-Mode Forward Voltage Method Growth Mode High Speed High Electric Field Interface Trap Density Improved Performance X-Ray Topography Two-Dimensional Electron Gas(2DEG) Technology Trends Photoluminescence Characteristics Radio Frequency (Rf) Subband Energies Multi-Step P-Type Gan System Size Surface Treatments Surface Oxide Simulation Results Various Substrates Relative Ratio