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Youn Doo Hyeb
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Next-Generation Semiconductor Device Research Section
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Type Year Title Cited Download
Journal
2021 Fabrication of a Simultaneous Highly Transparent and Highly Hydrophobic Fibrous Films   Doo-Hyeb Youn   Applied Sciences, v.11, no.12, pp.1-11 5
Journal
2020 Synthesis and Gas Sensing Properties of WS2 Nanocrystallites Assembled Hierarchical WS2 Fibers by Electrospinning   Doo-Hyeb Youn   Nanotechnology, v.31, no.10, pp.1-12 22
Journal
2018 Comparison of Trapped Charges and Hysteresis Behavior in hBN Encapsulated Single MoS2 Flake based Field Effect Transistors on SiO2 and hBN Substrates   Changhee Lee  Nanotechnology, v.29, no.33, pp.1-8 78
Journal
2018 High Performance Self-gating Graphene/MoS2 Diode Enabled by Asymmetric Contacts   Muhammad Atif Khan  Nanotechnology, v.29, no.39, pp.1-6 7
Journal
2018 Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure   Muhammad Atif Khan  ACS Applied Materials & Interfaces, v.10, no.28, pp.23961-23967 18
Journal
2018 Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2   Muhammad Atif Khan  Chemistry of Materials, v.30, no.3, pp.1011-1016 20
Journal
2018 Na-Cation-Assisted Exfoliation of MX2 (M = Mo, W; X = S, Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer-Nanocomposite Memory Applications   Changbong Yeon   Small, v.14, no.2, pp.1-10 20
Journal
2017 Arbitrary Alignment-angle Control Method of Electrospun Fibers: Potential for a Stretchable Electrode Material   Doo-Hyeb Youn   RSC Advances, v.7, no.71, pp.44945-44953 6
Journal
2017 Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single- Layer MoS2 Device   Muhammad Atif Khan  ACS Applied Materials & Interfaces, v.9, no.32, pp.26983-26989 8
Conference
2017 Electrospun Nanofiber of Polyvinyl Alcohol Composite With Highly Concentrated Graphene Nanosheet   Changbong Yeon   International Forum on Functional Materials (IFFM) 2017, pp.1-1
Journal
2017 Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment   Moonshik Kang  Nanoscale, v.9, no.4, pp.1645-1652 42
Journal
2017 Hopping Conduction and Random Telegraph Signal in an Exfoliated Multilayer MoS2 field-effect Transistor   Lijun Li  Nanotechnology, v.28, no.7, pp.1-7 6
Journal
2016 Transparent Conducting Films of Silver Hybrid Films Formed by Near-field Electrospinning   Doo-Hyeb Youn   Materials Letters, v.185, pp.139-142 4
Journal
2016 Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors   Inyeal Lee  Advanced Materials, v.28, no.43, pp.9519-9525 75
Conference
2016 Electro-spun Metal Fiber Webs Encapsulated by a Graphene Layer as a Current Spreading Layers   D. H. Youn   International Conference on Recent Progress in Graphene/2D Research (RPGR) 2016, pp.217-217
Conference
2016 High Performance Transparent Electrode Consisting of the Spin Coated AgNW and the Electro-spun AgNW Hybrid Structure Fabricated by Near-Field Electro-Spinning   D. H. Youn   Nanotech France 2016, pp.1-2
Conference
2014 Convection-Based Realtime Polymerase Chain Reaction (PCR) Utilizing Transparent Graphene Heaters   Kwang Hyo Chung   SENSORS 2014, pp.1-4 3
Journal
2014 Flexible and Transparent Gas Molecule Sensor Integrated with Sensing and Heating Graphene Layers   Hongkyw Choi, Jin Sik Choi   Small, v.10, no.18, pp.3685-3691 158
Journal
2013 Graphene Transparent Electrode for Enhanced Optical Power and Thermal Stability in GaN Light-Emitting Diodes   Doo-Hyeb Youn   Nanotechnology, v.24, no.7, pp.1-7 38
Journal
2012 Graphene-Based Electronic and Optoelectronic Devices   김진태   전자통신동향분석, v.27, no.5, pp.1-9
Conference
2012 High Power Light Emitting Diode with Graphene Transparent Electrode   Doo-Hyeb Youn   International Conference on Graphene 2012, pp.1-2
Journal
2010 Preparation and Characteristics of PMMA Microlens Array for a BLU Application by An Inkjet Printing Method   Yong Suk Yang   Molecular Crystals and Liquid Crystals, v.520, no.1, pp.239-244 7
Journal
2009 Fabrication and Characterization of an OTFT-Based Biosensor Using a Biotinylated F8T2 Polymer   Sang Chul Lim   ETRI Journal, v.31, no.6, pp.647-652 11
Journal
2009 Electrohydrodynamic Micropatterning of Silver Ink using Near-Field Electrohydrodynamic Jet Printing with Tilted-Outlet Nozzle   Doo Hyeb Youn   Applied Physics A : Materials Science & Processing, v.96, no.4, pp.933-938 65
Conference
2009 Preparation and Characteristics of Solution-Processable Organic Thin Film Transistors on a PES Substrate   Yong Suk Yang   Trends in Nanotechnology Conference (TNT) 2009, pp.1-2
Journal
2009 Annealing-induced Modifications of Carrier Dynamics andPlasmon-phonon Coupling in Low-temperature-grown GaAs   Chang Sub Kim  Journal of the Korean Physical Society, v.55, no.2, pp.630-635 1
Conference
2009 Preparation and Characteristics of PMMA Microlens Array for a BLU Application by an Inkjet Printing Method   Yong Suk Yang   KJF International Conference on Organic Materials for Electronics and Photonics (KJF-ICOMEP) 2009, pp.1-4
Journal
2008 Effects of Post-growth Annealing on the Structure and Electro-optical Properties of Low-temperature Grown GaAs   Doo-Hyeb Youn   Journal of Applied Physics, v.103, no.12, pp.1-5 13
Journal
2007 Structural Change and Its Electrooptical Effects on Terahertz Radiation with Post-Growth Annealing of Low-Temperature-Grown GaAs   Doo-Hyeb Youn   Japanese Journal of Applied Physics, v.46, no.10, pp.6514-6518 1
Journal
2007 Observation of abrupt first-order metal–insulator transition in Be-doped GaAs   Hyun-Tak Kim   Journal of Crystal Growth, v.301-302, pp.252-255 4
Journal
2007 Short Range Scattering Effect of InAs Quantum Dots in the Transport Properties of Two Dimensional Electron Gas   E. S. Kannan  Applied Physics Letters, v.90, no.15, pp.1-3 9
Journal
2007 Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates   Hyun-Kyu Park  Physica E : Low-dimensional Systems and Nanostructures, v.37, no.1-2, pp.158-162 30
Journal
2006 Terahertz Imaging and Its Applications in Security and Safety   윤두협   전자통신동향분석, v.21, no.4, pp.129-141
Journal
2006 Vertically Well-Aligned ZnO Nanowires on C-Al2O3 and GaN Substrates by Au Catalyst   Hyun Kyu Park  ETRI Journal, v.28, no.6, pp.787-789 21
Journal
2006 New Growth Method of ZnO Nanostructures Using Sputter Machines without Heat Treatment   Doo Hyeb Youn   Japanese Journal of Applied Physics, v.45, no.11, pp.8957-8960 3
Conference
2006 A New Growth Method of ZnO Nano Structures using Sputter Machines without any Heat Treatment   Doo Hyeb Youn   IEEE Sensors 2006, pp.1-2
Journal
2006 Trend of Quantum-Cascade Laser   윤두협   전자통신동향분석, v.21, no.5, pp.119-128
Journal
2006 Trend and Possibility of Terahertz Wave Technology   윤두협   전자통신동향분석, v.21, no.4, pp.129-141
Journal
2006 Experimental Evidence for Drude-Boltzmann-Like Transport in a Two-Dimensional Electron Gas in an AlGaN/GaN Heterostructure   Jing Han Chen  Journal of the Korean Physical Society, v.48, no.6, pp.1539-1543
Journal
2006 Efficient Analysis of Ferroelectric Device for Microwave Propagation Characteristics   Young Tae Kim  Integrated Ferroelectrics, v.86, no.1, pp.117-124 2
Journal
2005 Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse   Byung Gyu Chae   Physica B : Condensed Matter, v.369, no.1-4, pp.76-80 129
Journal
2005 Highly Oriented VO2 Thin Films Prepared by Sol-Gel Deposition   Byung Gyu Chae   Electrochemical and Solid-State Letters, v.9, no.1, pp.C12-C14 102
Journal
2005 Observation of Abrupt Metallic Transitions in p-Type GaAs Devices and Comparison with Avalanche Breakdown in the InGaAs APD   Doo Hyeb Youn   Journal of the Korean Physical Society, v.47, no.1, pp.1-5
Journal
2004 The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs   Doo-Hyeb Youn   IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789 15
Journal
2003 High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz   D.-H. Youn   Electronics Letters, v.39, no.6, pp.566-567 15
Journal
2002 Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions   Kyu-Seok Lee   ETRI Journal, v.24, no.4, pp.270-279 39