Journal
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2021 |
Fabrication of a Simultaneous Highly Transparent and Highly Hydrophobic Fibrous Films
Doo-Hyeb Youn
Applied Sciences, v.11, no.12, pp.1-11 |
5 |
|
Journal
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2020 |
Synthesis and Gas Sensing Properties of WS2 Nanocrystallites Assembled Hierarchical WS2 Fibers by Electrospinning
Doo-Hyeb Youn
Nanotechnology, v.31, no.10, pp.1-12 |
22 |
|
Journal
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2018 |
Comparison of Trapped Charges and Hysteresis Behavior in hBN Encapsulated Single MoS2 Flake based Field Effect Transistors on SiO2 and hBN Substrates
Changhee Lee
Nanotechnology, v.29, no.33, pp.1-8 |
78 |
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Journal
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2018 |
High Performance Self-gating Graphene/MoS2 Diode Enabled by Asymmetric Contacts
Muhammad Atif Khan
Nanotechnology, v.29, no.39, pp.1-6 |
7 |
|
Journal
|
2018 |
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure
Muhammad Atif Khan
ACS Applied Materials & Interfaces, v.10, no.28, pp.23961-23967 |
18 |
|
Journal
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2018 |
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
Muhammad Atif Khan
Chemistry of Materials, v.30, no.3, pp.1011-1016 |
20 |
|
Journal
|
2018 |
Na-Cation-Assisted Exfoliation of MX2 (M = Mo, W; X = S, Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer-Nanocomposite Memory Applications
Changbong Yeon
Small, v.14, no.2, pp.1-10 |
20 |
|
Journal
|
2017 |
Arbitrary Alignment-angle Control Method of Electrospun Fibers: Potential for a Stretchable Electrode Material
Doo-Hyeb Youn
RSC Advances, v.7, no.71, pp.44945-44953 |
6 |
|
Journal
|
2017 |
Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single- Layer MoS2 Device
Muhammad Atif Khan
ACS Applied Materials & Interfaces, v.9, no.32, pp.26983-26989 |
8 |
|
Conference
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2017 |
Electrospun Nanofiber of Polyvinyl Alcohol Composite With Highly Concentrated Graphene Nanosheet
Changbong Yeon
International Forum on Functional Materials (IFFM) 2017, pp.1-1 |
|
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Journal
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2017 |
Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment
Moonshik Kang
Nanoscale, v.9, no.4, pp.1645-1652 |
42 |
|
Journal
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2017 |
Hopping Conduction and Random Telegraph Signal in an Exfoliated Multilayer MoS2 field-effect Transistor
Lijun Li
Nanotechnology, v.28, no.7, pp.1-7 |
6 |
|
Journal
|
2016 |
Transparent Conducting Films of Silver Hybrid Films Formed by Near-field Electrospinning
Doo-Hyeb Youn
Materials Letters, v.185, pp.139-142 |
4 |
|
Journal
|
2016 |
Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors
Inyeal Lee
Advanced Materials, v.28, no.43, pp.9519-9525 |
75 |
|
Conference
|
2016 |
Electro-spun Metal Fiber Webs Encapsulated by a Graphene Layer as a Current Spreading Layers
D. H. Youn
International Conference on Recent Progress in Graphene/2D Research (RPGR) 2016, pp.217-217 |
|
|
Conference
|
2016 |
High Performance Transparent Electrode Consisting of the Spin Coated AgNW and the Electro-spun AgNW Hybrid Structure Fabricated by Near-Field Electro-Spinning
D. H. Youn
Nanotech France 2016, pp.1-2 |
|
|
Conference
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2014 |
Convection-Based Realtime Polymerase Chain Reaction (PCR) Utilizing Transparent Graphene Heaters
Kwang Hyo Chung
SENSORS 2014, pp.1-4 |
3 |
|
Journal
|
2014 |
Flexible and Transparent Gas Molecule Sensor Integrated with Sensing and Heating Graphene Layers
Hongkyw Choi,
Jin Sik Choi
Small, v.10, no.18, pp.3685-3691 |
158 |
|
Journal
|
2013 |
Graphene Transparent Electrode for Enhanced Optical Power and Thermal Stability in GaN Light-Emitting Diodes
Doo-Hyeb Youn
Nanotechnology, v.24, no.7, pp.1-7 |
38 |
|
Journal
|
2012 |
Graphene-Based Electronic and Optoelectronic Devices
김진태
전자통신동향분석, v.27, no.5, pp.1-9 |
|
|
Conference
|
2012 |
High Power Light Emitting Diode with Graphene Transparent Electrode
Doo-Hyeb Youn
International Conference on Graphene 2012, pp.1-2 |
|
|
Journal
|
2010 |
Preparation and Characteristics of PMMA Microlens Array for a BLU Application by An Inkjet Printing Method
Yong Suk Yang
Molecular Crystals and Liquid Crystals, v.520, no.1, pp.239-244 |
7 |
|
Journal
|
2009 |
Fabrication and Characterization of an OTFT-Based Biosensor Using a Biotinylated F8T2 Polymer
Sang Chul Lim
ETRI Journal, v.31, no.6, pp.647-652 |
11 |
|
Journal
|
2009 |
Electrohydrodynamic Micropatterning of Silver Ink using Near-Field Electrohydrodynamic Jet Printing with Tilted-Outlet Nozzle
Doo Hyeb Youn
Applied Physics A : Materials Science & Processing, v.96, no.4, pp.933-938 |
65 |
|
Conference
|
2009 |
Preparation and Characteristics of Solution-Processable Organic Thin Film Transistors on a PES Substrate
Yong Suk Yang
Trends in Nanotechnology Conference (TNT) 2009, pp.1-2 |
|
|
Journal
|
2009 |
Annealing-induced Modifications of Carrier Dynamics andPlasmon-phonon Coupling in Low-temperature-grown GaAs
Chang Sub Kim
Journal of the Korean Physical Society, v.55, no.2, pp.630-635 |
1 |
|
Conference
|
2009 |
Preparation and Characteristics of PMMA Microlens Array for a BLU Application by an Inkjet Printing Method
Yong Suk Yang
KJF International Conference on Organic Materials for Electronics and Photonics (KJF-ICOMEP) 2009, pp.1-4 |
|
|
Journal
|
2008 |
Effects of Post-growth Annealing on the Structure and Electro-optical Properties of Low-temperature Grown GaAs
Doo-Hyeb Youn
Journal of Applied Physics, v.103, no.12, pp.1-5 |
13 |
|
Journal
|
2007 |
Structural Change and Its Electrooptical Effects on Terahertz Radiation with Post-Growth Annealing of Low-Temperature-Grown GaAs
Doo-Hyeb Youn
Japanese Journal of Applied Physics, v.46, no.10, pp.6514-6518 |
1 |
|
Journal
|
2007 |
Observation of abrupt first-order metal–insulator transition in Be-doped GaAs
Hyun-Tak Kim
Journal of Crystal Growth, v.301-302, pp.252-255 |
4 |
|
Journal
|
2007 |
Short Range Scattering Effect of InAs Quantum Dots in the Transport Properties of Two Dimensional Electron Gas
E. S. Kannan
Applied Physics Letters, v.90, no.15, pp.1-3 |
9 |
|
Journal
|
2007 |
Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates
Hyun-Kyu Park
Physica E : Low-dimensional Systems and Nanostructures, v.37, no.1-2, pp.158-162 |
30 |
|
Journal
|
2006 |
Terahertz Imaging and Its Applications in Security and Safety
윤두협
전자통신동향분석, v.21, no.4, pp.129-141 |
|
|
Journal
|
2006 |
Vertically Well-Aligned ZnO Nanowires on C-Al2O3 and GaN Substrates by Au Catalyst
Hyun Kyu Park
ETRI Journal, v.28, no.6, pp.787-789 |
21 |
|
Journal
|
2006 |
New Growth Method of ZnO Nanostructures Using Sputter Machines without Heat Treatment
Doo Hyeb Youn
Japanese Journal of Applied Physics, v.45, no.11, pp.8957-8960 |
3 |
|
Conference
|
2006 |
A New Growth Method of ZnO Nano Structures using Sputter Machines without any Heat Treatment
Doo Hyeb Youn
IEEE Sensors 2006, pp.1-2 |
|
|
Journal
|
2006 |
Trend of Quantum-Cascade Laser
윤두협
전자통신동향분석, v.21, no.5, pp.119-128 |
|
|
Journal
|
2006 |
Trend and Possibility of Terahertz Wave Technology
윤두협
전자통신동향분석, v.21, no.4, pp.129-141 |
|
|
Journal
|
2006 |
Experimental Evidence for Drude-Boltzmann-Like Transport in a Two-Dimensional Electron Gas in an AlGaN/GaN Heterostructure
Jing Han Chen
Journal of the Korean Physical Society, v.48, no.6, pp.1539-1543 |
|
|
Journal
|
2006 |
Efficient Analysis of Ferroelectric Device for Microwave Propagation Characteristics
Young Tae Kim
Integrated Ferroelectrics, v.86, no.1, pp.117-124 |
2 |
|
Journal
|
2005 |
Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse
Byung Gyu Chae
Physica B : Condensed Matter, v.369, no.1-4, pp.76-80 |
129 |
|
Journal
|
2005 |
Highly Oriented VO2 Thin Films Prepared by Sol-Gel Deposition
Byung Gyu Chae
Electrochemical and Solid-State Letters, v.9, no.1, pp.C12-C14 |
102 |
|
Journal
|
2005 |
Observation of Abrupt Metallic Transitions in p-Type GaAs Devices and Comparison with Avalanche Breakdown in the InGaAs APD
Doo Hyeb Youn
Journal of the Korean Physical Society, v.47, no.1, pp.1-5 |
|
|
Journal
|
2004 |
The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs
Doo-Hyeb Youn
IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789 |
15 |
|
Journal
|
2003 |
High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz
D.-H. Youn
Electronics Letters, v.39, no.6, pp.566-567 |
15 |
|
Journal
|
2002 |
Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions
Kyu-Seok Lee
ETRI Journal, v.24, no.4, pp.270-279 |
39 |
|