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Conference
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2025 |
Surface Refinement and Electrical Enhancement of 3D GaN fin Structures through TMAH Treatment
Hyun-Woo Lee
Internatinoal Conference on Nitride Semiconductors (ICNS) 2025, pp.646-646 |
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Conference
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2025 |
Experimental Analysis and Performance Evaluation of GaN PiN Betavoltaic Cells
Jaewon Park
International Conference on Nitride Semiconductors (ICNS) 2025, pp.1-1 |
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Journal
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2025 |
Research Trends in Compound Semiconductor Material Technology for 3D stacking
곽희민
전자통신동향분석, v.40, no.1, pp.44-53 |
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Conference
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2024 |
Research of transferable GaN wafers based on 2D material-assisted growth for 6G communication devices
Hoe-Min Kwak
International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1488-1489 |
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Conference
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2024 |
Separable GaN membrane technology using 2D material-assisted GaN homo-epitaxial growth by MOCVD and low-temperature buffer layer growth technique
곽희민
한국LED·광전자학회 학술대회 2024, pp.1-1 |
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Conference
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2024 |
Separable GaN membrane technology using 2D material-assisted GaN homo-epitaxial growth by MOCVD and low-temperature buffer layer growth technique
곽희민
한국LED·광전자학회 학술대회 2024, pp.1-1 |
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Conference
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2024 |
Electrical characteristics of regrown AlGaN/GaN HEMT for implementation of current aperture vertical electron transistors
곽현탁
한국LED·광전자학회 학술대회 2024, pp.1-1 |
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Conference
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2024 |
Separation Feasibility of 2D Material-Assisted GaN Epitaxy :The Role of Low-Temperature Buffer Layer and MOCVD Growth Techniques
Hoe-Min Kwak
Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM) 2024, pp.1-1 |
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