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Conference
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2025 |
Surface Refinement and Electrical Enhancement of 3D GaN fin Structures through TMAH Treatment
Hyun-Woo Lee
Internatinoal Conference on Nitride Semiconductors (ICNS) 2025, pp.646-646 |
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Conference
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2025 |
Experimental Analysis and Performance Evaluation of GaN PiN Betavoltaic Cells
Jaewon Park
International Conference on Nitride Semiconductors (ICNS) 2025, pp.1-1 |
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Journal
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2025 |
Research Trends in Compound Semiconductor Material Technology for 3D stacking
곽희민
전자통신동향분석, v.40, no.1, pp.44-53 |
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Conference
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2024 |
Electrical characteristics of regrown AlGaN/GaN HEMT for implementation of current aperture vertical electron transistors
곽현탁
한국LED·광전자학회 학술대회 2024, pp.1-1 |
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Conference
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2024 |
GaN current aperture vertical electron transistor for transferrable high-power electronics by using 2D materials
Hyeon-Tak Kwak
Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM) 2024, pp.1-1 |
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Conference
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2024 |
High power verical Gan-on-GaN Pin Diode technology
이형석
한국LED·광전자학회 학술대회 2024, pp.1-1 |
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Conference
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2024 |
Current aperture vertical electron transistor technology based on GaN for high voltage operation
곽현탁
한국LED·광전자학회 학술대회 2024, pp.1-1 |
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