ETRI-Knowledge Sharing Plaform

High Electron Mobility Transistor(HEMT) Algan/Gan Hemts Gan-Based Sic Substrate Device Performance Field Plate Components Technology Electrical Properties(I-V curve) Proton Radiation Via-Hole Surface Treatments Mechanical Stress Breakdown Voltage(BDV) Carrier Mobility Radiation Hardness Compound Semiconductor 3 V Next-Generation Fabrication Process Inductively-Coupled Plasma(ICP) Threshold Voltage(Vth) Cut-Off Frequency Bi-Layer Gate Length Maximum Oscillation Frequency Gate Recess Dielectric Layer Sapphire Substrates 30 Ghz Minimum Noise Figure Wet Chemical Etching Dry Etching Oxygen Plasma Treatment Algan/Gan Mis-Hemt Boron Nitride(BN) Diode Ideality Factor Etch Depth High Performance Metal Contact Noise Level Recessed Gate Release Layer Two-Step Transfer Characteristics X-Band 10 Ghz Dc Characteristics Gan Hemt Devices Passivation Layer T-Shaped Gate 5 Nm And Gate Compressive Stress Etching Conditions Multi-Purpose Transconductance (Gm) Channel Layer Device Properties Mim Capacitor Performance Degradation Rf Performance Schottky Diode Transfer Technique Atomic Force Microscope(AFM) Power Amplifiers(PAs) Sheet Resistance Tensile Stress Access Region Gate Resistance Hetero-Interface Power Amplifier Mmic Sic Device Contact Region Enhancement-Mode Gas Mixture Low Noise Trend Of Increasing Critical Defects Contact Resistance(73.40.Cg) Coulomb Scattering Etch Selectivity Molecular Beam Epitaxy(MBE) Mobility Extraction Method Mobility Behavior Stress Measurement Transmission Electron Microscopy(TEM) I-V Characteristic(Transport property) Transport Characteristics Gan Films O 3 Accurate Model Atomic Layer Deposition Creative Technology Carrier Transport Capping Layer Channel Thickness Channel Mobility Dislocation Density Depletion Mode Electrical Characterization Gaas Mhemt Gate Bias Stress Gan Epilayer Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) On-Resistance Power Switching Plasma-Enhanced Chemical Vapor Deposition(PECVD) Property Improvement Rf Characteristics Saturation Current X-Ray Photoelectron Spectroscopy (Xps) Etch Profile Atomic Force Microscopy (Afm) Cleaning Process Edge-Type Gan Nanowire Fe-Doped Gate Leakage Current Metal Deposition Process Technique Quality Improvement Power Semiconductor Recent Progress Rf Properties Subthreshold Slope(SS) Trapped Charge Tetramethylammonium Hydroxide Measurement Data Active Region Gan Hemt Technology Carrier Transfer Carrier Concentration High-Voltage And High-Power Interface Quality Metal-Insulator-Semiconductor(MIS) Pulsed Mode Surface Treatment Method Semi-Insulating Single-Layer Saturation Drain Current Sensor Device Gan Power Amplifier Device Characteristics Gas Sensors Gan Capping Key Device Ka-Band Material Properties Native Oxide Layer Normally-Off Oxide-Semiconductor Field-Effect Transistors Si-Doped Sin Passivation Systematic Study F Max Band Power Comparative Study Degradation Factor Diamond Heat Spreader Digital Etch Epitaxial Layer Gan-On-Sic Hemt Gan Hemt Modeling Iii-Nitrides Off-State Breakdown Plasma Damage Wideband Operation X-Ray Diffraction Capacitance-Voltage Algan/Gan Heterostructure Cu Film Class-F Electrical Characteristics Gate Insulator Insulating Layer Laser Lift-Off Linear Trend Nitride Layer Off Current Silicon Nitride Switching Device Stress Effects Stress Conditions Stress Engineering Temperature Dependence Thermal Conductivity Via Etch Aln Substrate Current-Voltage Characteristics CF 4 Defect-Free Front-Side High Power Density Substrate Effects Self-Heating Effect(SHE) Various Substrates