ETRI-Knowledge Sharing Plaform

High Electron Mobility Transistor(HEMT) Algan/Gan Hemts Gan-Based Sic Substrate Device Performance Gate Length Electrical Properties(I-V curve) Components Technology Proton Radiation Via-Hole Radiation Hardness Mechanical Stress Carrier Mobility Gate Recess Field Plate Surface Treatments Compound Semiconductor Sapphire Substrates Passivation Layer Bi-Layer Device Characteristics Atomic Force Microscope(AFM) Breakdown Voltage(BDV) Dielectric Layer Next-Generation 3 V 30 Ghz Boron Nitride(BN) Etch Depth Gaas Mhemt High Performance Recessed Gate Transfer Characteristics Two-Step Release Layer 5 Nm Atomic Force Microscopy (Afm) Cutoff Frequency Dc Characteristics Fabrication Process Inductively-Coupled Plasma(ICP) Threshold Voltage(Vth) T-Shaped Gate And Gate Algan/Gan Mishemts Compressive Stress Etching Conditions Gallium Nitride (Gan) Multi-Purpose Channel Layer Device Properties Key Device Ka-Band Mim Capacitor Performance Degradation Transfer Technique Systematic Study Epitaxial Layer Maximum Oscillation Frequency Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Sheet Resistance Access Region Hetero-Interface Power Amplifier Mmic Tensile Stress Sic Device Enhancement-Mode Contact Resistance(73.40.Cg) Coulomb Scattering Critical Defects Communication Infrastructure Dry Etching Etch Selectivity Front Side Gan Surface Gain Compression Gan Films Lattice Mismatch Mobility Behavior Molecular Beam Epitaxy(MBE) O 3 Oxygen Plasma Treatment Ohmic Contact Power Gain Process Conditions I-V Characteristic(Transport property) Transport Characteristics Trend Of Increasing Mobility Extraction Method Research Institute Wide Band Gap Zeta Potential(Surface charge) Stress Measurement Transmission Electron Microscopy(TEM) Threading Dislocation Density 6 Ghz Accurate Model Atomic Layer Deposition Carrier Transport Capping Layer Channel Thickness Channel Mobility Creative Technology Dc Measurements Diode Ideality Factor Depletion-Mode Electrical Characterization Etch Profile Gate Bias Stress Gan Epilayer Gate Width High Power Amplifier(HPA) Integrated Circuit Technology Metal Contact Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Noise Level On-Resistance Power Switching Plasma-Enhanced Chemical Vapor Deposition(PECVD) Property Improvement Rf Characteristics Saturation Current X-Ray Photoelectron Spectroscopy (Xps) X-Band Threading Dislocations(TDs) 5g Mobile Communication Annealing Process Cleaning Process Diode Parameters Edge-Type Fe-Doped Gan Nanowire Gate Leakage Current Gan Hemt Devices Gan Power Device Lithography Technology Measurement Data Metal Deposition Process Technique Power Semiconductor Quality Improvement Trapped Charge 10 Ghz Subthreshold Slope(SS) Rf Properties Recent Progress Stress Dependent Tetramethylammonium Hydroxide Active Region Carrier Transfer Gan Power Amplifier High Frequency Operation Gan Hemt Technology High-Efficiency Power Amplifiers(PAs) High-Voltage And High-Power Interface Quality Molybdenum-Copper Metal-Insulator-Semiconductor(MIS) Output Matching Pulsed Mode Raman Spectroscopy Wide Temperature Range Transconductance (Gm) Single-Layer Semi-Insulating Saturation Drain Current Surface Treatment Method Saturation Velocity Surface Roughness Schottky Barrier Height Sensor Device 5g Communications Gan Capping Communication Services Current Status E-Beam Lithography F Max High Temperature Gas Sensors Material Properties Native Oxide Layer Normally-Off Oxide-Semiconductor Field-Effect Transistors Rf Performance Schottky Diode Si-Doped Sin Passivation Band Power Charge Trapping Capacitance-Voltage Comparative Study Diamond Heat Spreader Degradation Factor Digital Etch Gan-On-Sic Hemt High Carrier Concentration Iii-Nitrides Matching Circuit Millimeter-Wave Band Off-State Breakdown Plasma Damage Residual Stress Wideband Operation Sin Deposition X-Ray Diffraction Temperature-Dependent Nitride Layer Algan/Gan Heterostructure Cu Film Electrical Characteristics Gate Resistance Gate Insulator Insulating Layer Low Energy Linear Trend Laser Lift-Off Output Power Density Off Current Packaging Technology Via Etch Thermal Conductivity Stress Engineering Switching Device Stress Effects Stress Conditions Stable Process Silicon Nitride Thermal Expansion Coefficient(TEC) Temperature Dependence Temperature-Controlled Aln Substrate Current-Voltage Characteristics Contact Region CF 4 Defect-Free Frequency Efficiency Frequency Bandwidth Heteroepitaxial Growth High Power Density Gan Hpa Gate Annealing Gas Mixture Low Noise Layer Thickness Minimum Noise Figure Performance And Reliability Recess Etch Various Substrates Technology Trends 28 Ghz Ramp-Up Radio Frequency (Rf) Wet Chemical Etching Service Market Saturation Characteristics Substrate Effects Self-Heating Effect(SHE) Temperature Effect