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Junhyung Kim

Department: RF/Power Components Research Section

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KSP Keywords: Gaas Mhemt Gate Fabrication Source And Drain X-Band 5 Nm Annealing Process Cut-Off Gan Hemt Technology T-Gate Band Power Gate Length Indium Content Metamorphic High Electron Mobility Transistor(mHEMT) Power Amplifiers(PAs) Epitaxial Structures Power Amplifier Mmic Doping Concentration Frequency Efficiency Gan Hpa Gate Annealing 6 Ghz Source Resistance Radio Frequency(RF) Ramp-Up Leakage Current Ohmic Contact

Articles (8)
Patents (0)
Technology Transfer (0)
R&D Reports (0)
Standards (0)
Monographs/Talk (0)

논문 검색결과
Type	Year	Title	Cited	Download
Conference	2024	A Ku-Band Low-Noise Amplifier MMIC Using 0.15-µm GaN HEMT Technology Woojin Chang International Symposium on Antennas and Propagation (ISAP) 2024, pp.1-2
Conference	2024	GaAs mHEMT Technology Achieving a High Cut-off Frequncy of 446 GHz with a Gate Length of 75 nm Jong Yul Park International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1-2
Conference	2024	Enhancing Ohmic Contacts in GaN HEMT through Optimization of Ramp-up Rate in Annealing Process Junhyung Kim International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1104-1105
Journal	2024	The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8	0
Conference	2024	0.15 ㎛ GaN HPA MMIC for 6G Upper-mid Band Junhyung Jeong International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1456-1457
Conference	2024	GaN HEMT 소자의 게이트 열처리 공정 유무에 따른 DC 특성 분석 김준형 한국전자파학회 종합 학술 대회 (하계) 2024, pp.693-693
Conference	2024	A 15-W X-Band Power Amplifier MMIC Using 0.15-μm GaN HEMT Technology 장우진 대한전자공학회 학술 대회 (하계) 2024, pp.521-524
Journal	2023	Optimized recess etching criteria for T-gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel Jong Yul Park Electronics Letters, v.59, no.14, pp.1-3	1

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