Type | Year | Title | Cited | Download |
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Journal
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2024 | Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode Hoon-Ki Lee JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.42, no.4, pp.1-10 | ||
Journal
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2024 | β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV Kyu Jun Cho Transactions on Electrical and Electronic Materials, v.25, no.3, pp.1-5 | ||
Journal
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2024 | Comparison of Electrical Properties of β-Gallium Oxide (β-Ga2O3) Power SBDs with Guard Ring Structures 이훈기 전기전자재료학회논문지, v.37, no.2, pp.208-214 |