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Journal
|
2017 |
Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs
Sungjae Chang IEEE Electron Device Letters, v.38, no.4, pp.441-444 |
15 |
원문
|
|
Conference
|
2010 |
A Novel TFT with a Laterally Engineered Bandgap for of 3D Logic and Flash Memory
최성진 Symposium on VLSI Technology (VLSIT) 2010, pp.111-112 |
26 |
원문
|
|
Journal
|
2009 |
Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory
최성진 IEEE Electron Device Letters, v.30, no.1, pp.78-81 |
20 |
원문
|