Subjects : Current gain cutoff frequency
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2016 | Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate Hyung Sup Yoon IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 | 29 | 원문 |
| Journal | 2004 | The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs Youn Doo Hyeb IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789 | 15 | 원문 |
| Journal | 2003 | High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567 | 15 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
|---|---|---|---|---|---|
| No search results. | |||||
| Type | Year | Research Project | Primary Investigator | Download |
|---|---|---|---|---|
| No search results. | ||||