Subjects :
High breakdown voltage
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
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2024 |
β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV
Kyu Jun Cho Transactions on Electrical and Electronic Materials, v.25, no.3, pp.1-5 |
4 |
원문
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Conference
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2024 |
High breakdown voltage, low specific on-resistance GaN on GaN PiN diodes with low contact resistance on p-type GaN for high power applications
Kim Donghan Materials Research Society (MRS) Meeting 2024 (Spring), pp.1-2 |
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Journal
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2021 |
Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 |
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원문
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Journal
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2012 |
A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation
Kim Sang Gi Journal of the Korean Physical Society, v.60, no.10, pp.1552-1556 |
2 |
원문
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Conference
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2011 |
A new vertical GaN SBD employing in-situ metallic gallium ohmic contact
임지용 International Symposium on Power Semiconductor Devices (ISPSD) 2011, pp.247-250 |
7 |
원문
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Journal
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2008 |
Organic Field-effect Transistors with Thermal-cured Polyacrylate Gate Dielectric Films
Gi Heon Kim Thin Solid Films, v.516, no.7, pp.1574-1577 |
4 |
원문
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특허 검색결과
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연구보고서 검색결과
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