Subjects : Plasma etching process
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Conference | 2019 | Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218 | ||
| Journal | 2011 | Effect of Deposition Conditions and Crystallinity of Substrate on Phase Transition of Hydrogenated Si Films 김준관 Journal of the Electrochemical Society, v.158, no.7, pp.D430-D434 | 7 | 원문 |
| Conference | 2005 | EBL Patterning of Sub-10 nm Line Using HSQ with Plasma Etching Process and Fabricating of Triple-Gate MOS Transistors with 6 nm Gate Length Baek In Bok Silicon Nanoelectronics Workshop (SNW) 2005, pp.16-17 |
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| Type | Year | Research Project | Primary Investigator | Download |
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