Subjects : Phase-change random access memory (PRAM)
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2007 | Stress Reduction During Phase Change in Ge2Sb2Te5 by Capping TiN Film Park Young Sam Journal of Materials Science : Materials in Electronics, v.18, no.10, pp.1079-1082 | 6 | 원문 |
| Journal | 2007 | Stress Reduction of Ge2Sb2Te5 Crystallization by Capping Al2O3 Film Grown by PEALD Park Young Sam ECS Transactions, v.11, no.7, pp.245-248 | 2 | 원문 |
| Journal | 2006 | Simulation study on Heat Conduction of a Nanoscale Phase-Change Random Access Memory Cell 김준호 Journal of Nanoscience and Nanotechnology, v.6, no.11, pp.3474-3478 | 4 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
|---|---|---|---|---|---|
| Registered | 2008 | APPARATUS AND METHOD FOR WRITING DATA TO PHASE-CHANGE MEMORY BY USING POWER CALCULATION AND DATA INVERSION | UNITED STATES |
| Type | Year | Research Project | Primary Investigator | Download |
|---|---|---|---|---|
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