Subjects :
edge termination
논문 검색결과
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Journal
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2025 |
Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation
김상엽 Journal of Semiconductors, v.권호미정, pp.1-7 |
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원문
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Conference
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2025 |
Effects of Proton Irradiation on SiC Power Devices with Various Edge Termination Structures
김상엽 International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2025, pp.565-568 |
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Journal
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2019 |
Fabrication of 5,000V, 4-Inch Light Triggered Thyristor using Boron Diffusion Process and its Characterization
Park Kun Sik 전력전자학회논문지, v.24, no.6, pp.411-418 |
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원문
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Conference
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2015 |
Breakdown Characteristics of Edge Termination (Single/Double Zone JTE) with Doping concentration and Interface charge for 1700V 4H-SiC Schottky Diode
Won Jong Il 대한전자공학회 종합 학술 대회 (하계) 2015, pp.212-214 |
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Journal
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2012 |
Variation in the Electrical Properties of 100 V/100 a Rated Mesh and Stripe TDMOSFETs (Trench Double-Diffused MOSFETs) for Motor Drive Applications
Na Kyoung Il Journal of the Korean Physical Society, v.60, no.10, pp.1508-1512 |
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원문
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Conference
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2011 |
Variation of Electrical Properties with Edge Termination in Mesh Type Trench Double Diffused MOSFETs (TDMOS) for High Power Application
Na Kyoung Il 한국진공학회 학술 대회 (동계) 2008, pp.110-110 |
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특허 검색결과
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연구보고서 검색결과
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