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Journal
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2011 |
Etching characteristics and mechanism of Ga-doped ZnO thin films in inductively-coupled HBr/X (X = Ar, He, N2, O2) plasmas
함용현 Vacuum, v.85, no.11, pp.1021-1025 |
10 |
원문
|
|
Journal
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2010 |
Etching Characteristics and Mechanism of ZnO and Ga-Doped ZnO Thin Films in Inductively Coupled HBr/Ar/CHF3 Plasma
함용현 Japanese Journal of Applied Physics, v.49, no.8 PART 2, pp.1-5 |
5 |
원문
|
|
Journal
|
2009 |
Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma
한용현 Japanese Journal of Applied Physics, v.48, no.8, pp.08HD041-08HD045 |
8 |
원문
|
|
Journal
|
2008 |
Model-Based Analysis of Plasma Parameters and Active Species Kinetics in Cl2/X (X=Ar, He, N2) Inductively Coupled Plasmas
Alexander Efremov Journal of the Electrochemical Society, v.155, no.12, pp.D777-D782 |
72 |
원문
|