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Journal
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2018 |
Ultralarge Area Sub-10 nm Plasmonic Nanogap Array by Block Copolymer Self-Assembly for Reliable High-Sensitivity SERS
Ju Young Kim ACS Applied Materials & Interfaces, v.10, no.51, pp.44660-44667 |
72 |
원문
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Journal
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2018 |
Ultralarge Area Sub-10 nm Plasmonic Nanogap Array by Block Copolymer Self-Assembly for Reliable High-Sensitivity SERS
진형민 ACS Applied Materials & Interfaces, v.10, no.51, pp.44660-44667 |
72 |
원문
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Conference
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2013 |
Siliconized Silsesquioxane-based Nonstick Mold for Fabrication of Sub-10 nm Features
Bong Kuk Lee 나노 임프린트·몰딩·프린트 학술 대회 (nano-IMP) 2013, pp.66-67 |
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Journal
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2012 |
The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
Jang Moon Gyu Thin Solid Films, v.520, no.6, pp.2166-2169 |
1 |
원문
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Conference
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2005 |
EBL Patterning of Sub-10 nm Line Using HSQ with Plasma Etching Process and Fabricating of Triple-Gate MOS Transistors with 6 nm Gate Length
Baek In Bok Silicon Nanoelectronics Workshop (SNW) 2005, pp.16-17 |
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