Subjects :
total ionizing dose
논문 검색결과
| Type |
Year |
Title |
Cited |
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Journal
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2023 |
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Sungjae Chang Nanomaterials, v.13, no.5, pp.1-13 |
2 |
원문
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Journal
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2022 |
ICT Device Impacts and Development Trends on Cosmic Radiation Environment
Yi Yoonsik 전자통신동향분석, v.37, no.2, pp.21-29 |
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원문
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Journal
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2020 |
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Sungjae Chang Nanomaterials, v.10, no.11, pp.1-11 |
14 |
원문
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Conference
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2016 |
Total Ionizing Dose Effects on GaN-based HEMTs and MOSHEMTs: Effects of Channel Thickness and Epitaxial MgCaO as Gate Dielectric
M. Bhuiyan Semiconductor Interface Specialists Conference (SISC) 2016, pp.1-2 |
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특허 검색결과
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Family Pat. |
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연구보고서 검색결과
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