Subjects : high electric field
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2021 | Enhanced Interfacial Reaction of Silicon Carbide Fillers onto the Metal Substrate in Carbon Nanotube Paste for Reliable Field Electron Emitters Eun Sol Ko Nanotechnology, v.32, no.19, pp.1-8 | 9 | 원문 |
| Conference | 2015 | Effects on Breakdown Voltage Characteristics of Various Field Plates in GaN FETs Woojin Chang International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2 | ||
| Journal | 2012 | A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation Kim Sang Gi Journal of the Korean Physical Society, v.60, no.10, pp.1552-1556 | 2 | 원문 |
| Journal | 2007 | Observation of abrupt first-order metal–insulator transition in Be-doped GaAs Hyun-Tak Kim Journal of Crystal Growth, v.301-302, pp.252-255 | 4 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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