Subjects : Drain saturation current
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Conference | 2010 | Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987 | ||
| Journal | 2006 | Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 | 2 | 원문 |
| Journal | 2005 | DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690 | 5 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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