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Conference
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2012 |
The thermal annealing effects of gate insulator on the electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors
International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1 |
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Conference
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2012 |
Change of electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors depending on gate insulators
International Conference on Microelectronics and Plasma Technology (ICMAP) 2012, pp.1-1 |
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Journal
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2009 |
Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors
Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477 |
1 |
원문
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