Subjects : AlGaAs/InGaAs/GaAs pHEMTs
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2006 | Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer Jong-Won Lim Journal of the Korean Physical Society, v.49, no.3, pp.S774-S779 | ||
| Conference | 2006 | Comparative Study of DC and Microwave Characteristics of 0.12 μm T-Shaped Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Hybrid and Conventional E-beam Lithography Process Jong-Won Lim International Conference on Solid State Devices and Materials (SSDM) 2006, pp.956-957 | 원문 | |
| Conference | 2006 | Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer Jong-Won Lim 한국반도체 학술 대회 (KCS) 2006, pp.1-2 | ||
| Journal | 2005 | A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs Jong-Won Lim ETRI Journal, v.27, no.3, pp.304-311 | 8 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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