Subjects : Indium content
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2023 | Optimized recess etching criteria for T-gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel Jong Yul Park Electronics Letters, v.59, no.14, pp.1-3 | 2 | 원문 |
| Journal | 2006 | Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 | 2 | 원문 |
| Journal | 2005 | DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690 | 5 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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