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Journal
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2018 |
DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess
Jung Hyunwook ECS Journal of Solid State Science and Technology, v.7, no.4, pp.197-200 |
3 |
원문
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Conference
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2007 |
A 45-to-60-GHz Two-Band SiGe: C VCO for Millimeter-Wave Applications
Lee Ja Yol Radio Frequency Integrated Circuits Symposium (RFIC) 2007, pp.709-712 |
6 |
원문
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Conference
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2006 |
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim 한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
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