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Conference
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2025 |
Influence of Double-Deck T-gate Structures on Cut-Off Frequency in Al0.3Ga0.7N/AlN/GaN HEMTs
Park Jongyul International Microwave Symposium (IMS) 2025, pp.874-877 |
0 |
원문
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Journal
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2016 |
Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
Hyung Sup Yoon IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 |
29 |
원문
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Conference
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2015 |
X-Band 0.2 μm AlGaN/GaN MISFET with SiN-Assisted Double-Deck T-Shaped Gate Structure
Hokyun Ahn International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1 |
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