|
Conference
|
2018 |
Fabrication and Characteristics of GaN HEMT on SiC Device with Internal Backside Via-hole in Active Region for MMIC Applications
Min Byoung-Gue 한국 반도체 학술 대회 (KCS) 2018, pp.663-663 |
|
|
|
Conference
|
2017 |
Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications
Kyu Jun Cho International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) 2017, pp.1-3 |
0 |
|
|
Journal
|
2017 |
Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices
Doohyung Cho IEICE Transactions on Electronics, v.E100.C, no.5, pp.439-445 |
0 |
원문
|