Subjects : InP/InGaAs heterojunction
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2007 | Characteristics of Self-aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall Min Byoung-Gue Solid State Phenomena, v.124-126, pp.97-100 | 원문 | |
| Journal | 2007 | A Flip-Chip-Packaged InP HBT Transimpedance Amplifier for 40-Gb/s Optical Link Applications Ju Chull Won Journal of the Korean Physical Society, v.50, no.3, pp.862-865 | 2 | 원문 |
| Conference | 2006 | Characteristics of Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall Min Byoung-Gue IUMRS International Conference in Asia (IUMRS-ICA) 2006, pp.97-100 |
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| Type | Year | Research Project | Primary Investigator | Download |
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