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Journal
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2025 |
Growth Behaviors of InAs/GaAs Quantum Dots Using Metal−Organic Chemical Vapor Deposition with Dual-Channel AsH3 Supply and H2 Carrier Gas Flow Rate Variation
김호성 Crystal Growth and Design, v.25, no.16, pp.6628-6635 |
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원문
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Journal
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2011 |
Etching characteristics and mechanism of Ga-doped ZnO thin films in inductively-coupled HBr/X (X = Ar, He, N2, O2) plasmas
함용현 Vacuum, v.85, no.11, pp.1021-1025 |
10 |
원문
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Journal
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2010 |
Etching Characteristics and Mechanism of ZnO and Ga-Doped ZnO Thin Films in Inductively Coupled HBr/Ar/CHF3 Plasma
함용현 Japanese Journal of Applied Physics, v.49, no.8 PART 2, pp.1-5 |
5 |
원문
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Journal
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2010 |
Effect of High Temperature Post-Annealing of La0.7Sr0.3MnO3 Films Deposited by Radio Frequency Magnetron Sputtering on SiO2/Si Substrates Heated at Low Temperature
최선규 Thin Solid Films, v.518, no.15, pp.4432-4436 |
3 |
원문
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Journal
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2009 |
Control of the Thickness and Length of Germanium-Telluride Nanowires Via the Vapor-Liquid-Solid Method
Jung Soonwon Journal of the Korean Physical Society, v.54, no.2, pp.653-659 |
6 |
원문
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