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Journal
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2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9 |
5 |
원문
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Journal
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2015 |
Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment
Park Young Rak Physica Status Solidi (A), v.2112, no.5, pp.1170-1173 |
11 |
원문
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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