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Journal
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2026 |
Hydrogen-Stable Top-Gate Self-Aligned a-IGZO TFT With Tungsten Nitride Barrier on Source/Drain
김희태 IEEE Electron Device Letters, v.47, no.1, pp.96-99 |
0 |
원문
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Journal
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2009 |
Fabrication of N- and P-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods
신진욱 Japanese Journal of Applied Physics, v.48, no.4, pp.1-4 |
0 |
원문
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Journal
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2008 |
Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions
신진욱 IEEE Electron Device Letters, v.29, no.12, pp.1336-1339 |
4 |
원문
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