14MB1300, Silicon Nanophotonics-based next-generation computer interface platform,
Kim Gyungock
Abstract
Ⅰ. 해당 연도 추진 현황 Ⅰ-2 해당 연도 추진 실적
항목:o저전력 30G 실리콘 나노 포토닉 칩기술 개발
계획 - 30 Gbit/sec 실리콘 나노 포토닉 변조기 설계 제작
실적 □ 실리콘 PN diode 기반 Mach- Zehnder (MZ) Interferometer 타입의 실리콘 광 변조기설계 제작 (Mach- Zehnder Optical Modulator, MZM) 소자 설계, 포토마스크 제작 MZM Phase shifter길이: 1mm/750μm/500μm/250μm/100μm -CMOS-compatible 실리콘 공정기반의 30G 실리콘 나노포토닉 변조기 제작 ■ Silicon TRx Photonic Integrated Circuits (PIC)의 Transmitter (Tx) Part monolithic integration 설계, 제작 및 Tx 특성 측정 ■ 고효율(High-modulation efficiency) 광변조기 특성 측정 결과 1) 제작된 소자의 광 투과스펙트럼 및 변조효율 (Modulation efficiency) →측정된 FSR ~ 5.4 nm Modulation efficiency VπLπ ~ 1.72Vcm, Phase shift ~ 0.146nm/V 2) 소자 동작전압(peak-to-peak) : 저전력 소모 특성 저전압 1.2~2.5Vpp 이하 성취 3) 소자 동작속도 및 소광비(ER, Extinction Ratio, On/Off ratio) → 30 Gbps 이상 고속 특성성취 소광비 (ER) @ 30 Gbps 동작시 > 4dB 이상 성취 → 소광비> 4.6 dB @ 1.2 Vpp driving, 30 Gb/s작동시
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